Научная библиотека ТГУ catalog › Results of search for '91706'

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	1.	No cover image available Electrical properties of the V-defects of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.] by Novikov, Vadim A \| Bezrodnyy, Dmitriy A \| Voytsekhovskiy, Alexander V \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Grigoryev, Denis V. Source: Journal of electronic materialsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	2.	No cover image available Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M. Source: Journal of electronic materialsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	3.	No cover image available Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et.al.] by Izhnin, Igor I \| Voytsekhovskiy, Alexander V \| Korotaev, Alexander G \| Mynbaev, Karim D \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V \| Bonchyk, A. Yu \| Fitsych, Olena I \| Savytskyy, Hrygory V \| Świątek, Zbigniew. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	4.	No cover image available Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V \| Voytsekhovskiy, Alexander V. Source: Semiconductor science and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	5.	No cover image available Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	6.	No cover image available Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells A. V. Voitsekhovskii, D. I. Gorn by Voytsekhovskiy, Alexander V \| Gorn, Dmitriy Igorevich \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: Advanced Materials ResearchMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	7.	No cover image available Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe D. I. Gorn, A. V. Voitsekhovskii, S. M. Dzyadukh, S. N. Nesmelov by Gorn, Dmitriy Igorevich \| Dzyadukh, Stanislav M \| Nesmelov, Sergey N \| Voytsekhovskiy, Alexander V \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: International Journal of NanotechnologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	8.	No cover image available Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii by Lozovoy, Kirill A \| Kokhanenko, Andrey P \| Voytsekhovskiy, Alexander V. Source: Surface scienceMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	9.	No cover image available An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V. Source: Journal of electronic materialsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	10.	No cover image available Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra A. V. Voytsekhovskii, S. M. Dzyadukh, D. I. Gorn [et al.] by Voytsekhovskiy, Alexander V \| Dzyadukh, Stanislav M \| Gorn, Dmitriy Igorevich \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V. Source: Physica scriptaMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	11.	No cover image available TEM studies of structural defects in HgTe/HgCdTe quantum wells A. Yu. Bonchyk, H. V. Savytskyy, Z. Swiatek [et al.] by Bonchyk, A. Yu \| Savytskyy, Hrygory V \| Świątek, Zbigniew \| Morgiel, Y \| Izhnin, Igor I \| Voytsekhovskiy, Alexander V \| Korotaev, Alexander G \| Mynbaev, Karim D \| Fitsych, Olena I \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	12.	No cover image available Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskii, S. N. Nesmelov [et al.] by Izhnin, Igor I \| Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	13.	No cover image available Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V. Source: Journal of communications technology and electronicsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	14.	No cover image available Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs I. I. Izhnin, A. I. Izhnin, K. D. Mynbaev [et.al.] by Izhnin, A. I \| Mynbaev, Karim D \| Bazhenov, N. L \| Shilyaev, A. V \| Mikhailov, Nikolay N \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Fitsych, Olena I \| Voytsekhovskiy, Alexander V \| Izhnin, Igor I \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Opto-electronics reviewMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	15.	No cover image available Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films A. V. Voytsekhovskiy, I. I. Izhnin, I. I. Syvorotka [et al.] by Izhnin, Igor I \| Syvorotka, I. I \| Korotaev, Alexander G \| Mynbaev, Karim D \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Remesnik, V. G \| Yakushev, Maxim V \| Voytsekhovskiy, Alexander V. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format: electronic available online ; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	16.	No cover image available Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells I. I. Izhnin, I. I. Syvorotka, A. V. Voytsekhovskiy [et al.] by Syvorotka, I. I \| Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Izhnin, Igor I. Source: Applied nanoscienceMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	17.	No cover image available Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates I. I. Izhnin, A. V. Voytsekhovsky, A. G. Korotaev [et.al.] by Izhnin, Igor I \| Korotaev, Alexander G \| Fitsych, Olena I \| Bonchyk, A. Yu \| Savytskyy, Hrygory V \| Mynbaev, Karim D \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Voytsekhovskiy, Alexander V \| Yakushev, Maxim V \| Jakiela, Rafal. Source: Infrared physics and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	18.	No cover image available Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et.al.] by Izhnin, Igor I \| Voytsekhovskiy, Alexander V \| Korotaev, Alexander G \| Fitsych, Olena I \| Pociask-Bialy, Malgorzata \| Mynbaev, Karim D. Source: Opto-electronics reviewMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	19.	No cover image available Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V \| Dzyadukh, Stanislav M \| Grigoryev, Denis V \| Lyapunov, D. V \| Nesmelov, Sergey N. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	20.	No cover image available Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: Thin solid filmsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	21.	No cover image available Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskii by Lozovoy, Kirill A \| Kokhanenko, Andrey P \| Voytsekhovskiy, Alexander V \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: Physical chemistry chemical physicsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	22.	No cover image available Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko, V. G. Satdarov by Voytsekhovskiy, Alexander V \| Kokhanenko, Andrey P \| Satdarov, Vadim G \| Lozovoy, Kirill A \| Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: Surface scienceMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	23.	No cover image available GE/SI quantum dots formation by the method of molecular beam epitaxy K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko и др. by Lozovoy, Kirill A \| Kokhanenko, Andrey P \| Satdarov, Vadim G \| Kalin, Eugeniy A \| Voytsekhovskiy, Alexander V \| Томский государственный университет Радиофизический факультет Научные подразделения РФФ \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ. Source: Известия высших учебных заведений. ФизикаMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	24.	No cover image available Admittance of barrier structures based on mercury cadmium telluride A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V \| Voytsekhovskiy, Alexander V. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	25.	No cover image available Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V \| Marin, Denis V. Source: Journal of electronic materialsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	26.	No cover image available Unipolar barrier structures based on HgCdTe for infrared detection A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Gorn, Dmitriy Igorevich \| Kashirskii, Danila E \| Lozovoy, Kirill A \| Dirko, Vladimir V \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu. Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstractsMaterial type: Article; Format: electronic available online ; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	27.	No cover image available Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko [et al.] by Dirko, Vladimir V \| Lozovoy, Kirill A \| Kokhanenko, Andrey P \| Kukenov, Olzhas I \| Korotaev, Alexander G \| Voytsekhovskiy, Alexander V. Source: NanomaterialsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	28.	No cover image available High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii by Dirko, Vladimir V \| Lozovoy, Kirill A \| Kokhanenko, Andrey P \| Voytsekhovskiy, Alexander V. Source: NanotechnologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	29.	No cover image available Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voytsekhovskiy, K. A. Lozovoy [et.al.] by Grigoryev, Denis V \| Lozovoy, Kirill A \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Tarasenko, Viktor Fedotovich \| Shulepov, Mikhail A \| Dvoretsky, Sergei A \| Voytsekhovskiy, Alexander V. Source: Proceedings of SPIEMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	30.	No cover image available Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic I. I. Izhnin, S. A. Dvoretsky, K. D. Mynbaev [et.al.] by Dvoretsky, Sergei A \| Mynbaev, Karim D \| Fitsych, Olena I \| Mikhailov, Nikolay N \| Varavin, Vasilii S \| Pociask-Bialy, Malgorzata \| Voytsekhovskiy, Alexander V \| Sheregii, E \| Izhnin, Igor I \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Journal of applied physicsMaterial type: Article; Format: electronic available online ; Audience: Specialized; Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	31.	No cover image available Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii by Kokhanenko, Andrey P \| Lozovoy, Kirill A \| Voytsekhovskiy, Alexander V. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	32.	No cover image available Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh и др. by Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V \| Voytsekhovskiy, Alexander V. Source: Infrared physics and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	33.	No cover image available Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions K. A. Lozovoy, A. V. Voitsekhovskii, A. P. Kokhanenko, V. G. Satdarov by Lozovoy, Kirill A \| Kokhanenko, Andrey P \| Satdarov, Vadim G \| Voytsekhovskiy, Alexander V \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Радиофизический факультет Научные подразделения РФФ. Source: International Journal of NanotechnologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	34.	No cover image available Spectral characteristics of Si:Ge and Hg1–xCdхTe heterostructures A. V. Yatskiy, K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskiy by Lozovoy, Kirill A \| Kokhanenko, Andrey P \| Voytsekhovskiy, Alexander V \| Yatskiy, Alexey V \| Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Известия высших учебных заведений. ФизикаMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	35.	No cover image available Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy V. G. Satdarov, A. V. Voitsekhovskii, A. P. Kokhanenko, K. A. Lozovoy by Satdarov, Vadim G \| Kokhanenko, Andrey P \| Lozovoy, Kirill A \| Voytsekhovskiy, Alexander V \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ. Source: International Journal of NanotechnologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	36.	No cover image available Electro-physical characteristics of MIS structures with HgTe-based single quantum wells S. Dzyadukh, S. Nesmelov, A. Voytsekhovskiy, D. Gorn by Dzyadukh, Stanislav M \| Voytsekhovskiy, Alexander V \| Gorn, Dmitriy Igorevich \| Nesmelov, Sergey N. Source: Journal of Physics: Conference SeriesMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	37.	No cover image available Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn by Voytsekhovskiy, Alexander V \| Dzyadukh, Stanislav M \| Gorn, Dmitriy Igorevich \| Nesmelov, Sergey N \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ \| Томский государственный университет Научное управление Лаборатории НУ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format: electronic available online ; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	38.	No cover image available Properties of arsenic-implanted Hg1-xCdxTe MBE films I. I. Izhnin, A. V. Voitsekhovskiі, A. G. Korotaev [et.al.] by Izhnin, Igor I \| Korotaev, Alexander G \| Fitsych, Olena I \| Bonchyk, A. Yu \| Savytskyy, Hrygory V \| Mynbaev, Karim D \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Yakushev, Maxim V \| Voytsekhovskiy, Alexander V \| Jakiela, Rafal \| Trzyna, Malgorzata. Source: EPJ Web of ConferencesMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	39.	No cover image available Controlling of Ge quantum dots arrays parameters in Ge/Si nanoheterostructures grown by molecular beam epitaxy method V. G. Satdarov, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.] by Voytsekhovskiy, Alexander V \| Kokhanenko, Andrey P \| Lozovoy, Kirill A \| Kalin, Eugeniy A \| Satdarov, Vadim G \| Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Известия высших учебных заведений. ФизикаMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	40.	No cover image available Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et al.] by Izhnin, Igor I \| Mynbaev, Karim D \| Voytsekhovskiy, Alexander V \| Korotaev, Alexander G \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V \| Fitsych, Olena I \| Świątek, Zbigniew \| Izhnin, Igor I. Source: Infrared physics and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	41.	No cover image available Unipolar semiconductor barrier structures for infrared photodetector arrays (Review) I. D. Burlakov, N. A. Kulchitskii, A. V. Voytsekhovskiy [et al.] by Burlakov, I. D \| Kulchitskii, N. A \| Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Gorn, Dmitriy Igorevich. Source: Journal of communications technology and electronicsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	42.	No cover image available Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	43.	No cover image available The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V \| Marin, Denis V. Source: Technical physics lettersMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	44.	No cover image available Growth of germanium quantum dots on oxidized silicon surface K. A. Lozovoy, A. P. Kokhanenko, N. Yu. Akimenko [et al.] by Kokhanenko, Andrey P \| Akimenko, Nataliya Yu \| Dirko, Vladimir V \| Voytsekhovskiy, Alexander V \| Lozovoy, Kirill A. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	45.	No cover image available Nanostructures with Ge-Si quantum dots for infrared photodetectors I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.] by Fitsych, Olena I \| Voytsekhovskiy, Alexander V \| Kokhanenko, Andrey P \| Lozovoy, Kirill A \| Dirko, Vladimir V \| Izhnin, Igor I. Source: Opto-electronics reviewMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	46.	No cover image available Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V \| Dzyadukh, Stanislav M \| Grigoryev, Denis V \| Tarasenko, Viktor Fedotovich \| Shulepov, Mikhail A \| Nesmelov, Sergey N. Source: Journal of Physics: Conference SeriesMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	47.	No cover image available Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V \| Dzyadukh, Stanislav M \| Vasilev, Vladimir V \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V \| Nesmelov, Sergey N \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: Infrared physics and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	48.	No cover image available Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V \| Voytsekhovskiy, Alexander V. Source: Materials research expressMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	49.	No cover image available Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et.al.] by Izhnin, Igor I \| Voytsekhovskiy, Alexander V \| Korotaev, Alexander G \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V \| Bonchyk, A. Yu \| Savytskyy, Hrygory V \| Mynbaev, Karim D \| Fitsych, Olena I. Source: Infrared physics and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	50.	No cover image available Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range A. V. Voytsekhovskiy, N. A. Kulchitsky, S. N. Nesmelov, S. M. Dzyadukh by Kulchitskii, N. A \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Voytsekhovskiy, Alexander V. Source: Journal of communications technology and electronicsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)

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