Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates I. I. Izhnin, A. V. Voytsekhovsky, A. G. Korotaev [et.al.]
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ArticleSubject(s): пленки | ионы мышьяка | молекулярно-лучевая эпитаксия | градиентные поверхностные слоиGenre/Form: статьи в журналах Online resources: Click here to access online
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Infrared physics and technology Vol. 81. P. 52-58Abstract: A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabrication of ‘p+–n’-type photodiodes. First, formation of n+–p structure was investigated in p-type material, in order to study radiation-induced donor defects. Next, formation of p+–n structure was investigated in the course of implantation in n-type material and arsenic activation annealing. Influence of the graded-gap surface layer was found to be expressed in the degree of saturation of the concentration of radiation-induced defects, with results obtained on arsenic- and boron-implanted material differing due to the difference in the ion masses.
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A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabrication of ‘p+–n’-type photodiodes. First, formation of n+–p structure was investigated in p-type material, in order to study radiation-induced donor defects. Next, formation of p+–n structure was investigated in the course of implantation in n-type material and arsenic activation annealing. Influence of the graded-gap surface layer was found to be expressed in the degree of saturation of the concentration of radiation-induced defects, with results obtained on arsenic- and boron-implanted material differing due to the difference in the ion masses.
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