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Properties of arsenic-implanted Hg1-xCdxTe MBE films I. I. Izhnin, A. V. Voitsekhovskiі, A. G. Korotaev [et.al.]

Contributor(s): Izhnin, Igor I | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Yakushev, Maxim V | Voytsekhovskiy, Alexander V | Jakiela, Rafal | Trzyna, MalgorzataMaterial type: ArticleArticleSubject(s): пленки | акцепторные дефекты | молекулярно-лучевая эпитаксия | электрические свойстваGenre/Form: статьи в журналах Online resources: Click here to access online In: EPJ Web of Conferences Vol. 133. P. 01001 (1-4)Abstract: Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.
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Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.

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