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Growth of germanium quantum dots on oxidized silicon surface K. A. Lozovoy, A. P. Kokhanenko, N. Yu. Akimenko [et al.]

Contributor(s): Kokhanenko, Andrey P | Akimenko, N. Yu | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill AMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): квантовые точки | кремний | германий | оксид кремния | наногетероструктуры | молекулярно-лучевая эпитаксия | критическая толщина | поверхностная плотность | функция распределения по размерам | Фольмера-Вебера механизмGenre/Form: статьи в журналах Online resources: Click here to access online In: Russian physics journal Vol. 63, № 2. P. 296-302Abstract: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of the nucleation and growth of three-dimensional islands by the Volmer–Weber mechanism in this system is proposed. The dependences of the average size and surface density of quantum dots on the parameters of their synthesis are obtained. The proposed theoretical model can easily be extended to other material systems in which island growth by the Volmer–Weber mechanism is realized
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Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
the nucleation and growth of three-dimensional islands by the Volmer–Weber mechanism in this system is
proposed. The dependences of the average size and surface density of quantum dots on the parameters of their
synthesis are obtained. The proposed theoretical model can easily be extended to other material systems in
which island growth by the Volmer–Weber mechanism is realized

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