Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range A. V. Voytsekhovskiy, N. A. Kulchitsky, S. N. Nesmelov, S. M. Dzyadukh
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ArticleContent type: Текст Media type: электронный Subject(s): МДП-структуры | молекулярно-лучевая эпитаксия | адмиттанс | варизонный слойGenre/Form: статьи в журналах Online resources: Click here to access online
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Journal of communications technology and electronics Vol. 63, № 9. P. 1112-1118Abstract: Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed.
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Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed.
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