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    1.
    Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    2.
    Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods A. A. Pishchagin, K. A. Lozovoy, V. Y. Serokhvostov [et.al.]

    by Pishchagin, Anton A | Serokhvostov, V. Yu | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Nikiforov, Alexander I | Lozovoy, Kirill A.

    Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    3.
    Dark current and detectivity of multilayer Ge/Si photodetector with quantum dots R. M. H. Douhan, A. P. Kokhanenko, K. A. Lozovoy

    by Douhan, Rahaf M. H | Kokhanenko, Andrey P | Lozovoy, Kirill A.

    Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    4.
    Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods A. G. Korotaev, A. A. Pishchagin, A. P. Kokhanenko, A. I. Nikiforov

    by Korotaev, Alexander G | Kokhanenko, Andrey P | Nikiforov, Alexander I | Pishchagin, Anton A | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ.

    Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    5.
    Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots A. A. Pishchagin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Pishchagin, Anton A | Kokhanenko, Andrey P | Serokhvostov, V. Yu | Dzyadukh, Stanislav M | Nikiforov, Alexander I | Voytsekhovskiy, Alexander V.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    6.
    Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Physical chemistry chemical physicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    7.
    Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions V. A. Timofeev, A. P. Kokhanenko, A. I. Nikiforov [et.al.]

    by Timofeev, V. A | Nikiforov, Alexander I | Mashanov, Vladimir I | Tuktamyshev, Artur R | Loshkarev, Ivan D | Kokhanenko, Andrey P | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    8.
    Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko, V. G. Satdarov

    by Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Satdarov, Vadim G | Lozovoy, Kirill A | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    9.
    GE/SI quantum dots formation by the method of molecular beam epitaxy K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko и др.

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Satdarov, Vadim G | Kalin, Eugeniy A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Научные подразделения РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    10.
    High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Dirko, Vladimir V | Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    11.
    Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth K. A. Lozovoy, V. V. Dirko, V. P. Vinarskiy [et al.]

    by Lozovoy, Kirill A | Dirko, Vladimir V | Vinarskiy, Vladimir P | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Akimenko, Nataliya Yu.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    12.
    Microstructure and properties of a silicon coating deposited on a titanium nickelide substrate using molecular-beam epitaxy equipment K. V. Krukovskii, O. A. Kashin, A. V. Luchin [et al.]

    by Krukovskii, K. V | Kashin, Oleg A | Luchin, A. V | Kokhanenko, Andrey P | Dirko, Vladimir V | Lozovoy, Kirill A | Kashina, O. N | Bobrov, D. I.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    13.
    Single element 2D materials and methods of their epitaxial synthesis I. I. Izhnin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V | Vinarskiy, Vladimir P | Fitsych, Olena I.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    14.
    Influence of composition of Hg1-xCdxTe(x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation A. V. Voytsekhovskiy, D. V. Grigoryev, A. G. Korotaev [et al.]

    by Grigoryev, Denis V | Korotaev, Alexander G | Kokhanenko, Andrey P | Lozovoy, Kirill A | Izhnin, Igor I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Voytsekhovskiy, Alexander V | Varavin, Vasilii S | Yakushev, Maxim V.

    Source: Materials research expressMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    15.
    Measurement of the charge carrier mobility in MEH-PPV and MEH-PPV-POSS organic semiconductor films I. V. Romanov, A. V. Voytsekhovskii, K. M. Dyagterenko [et.al.]

    by Romanov, I. V | Dyagterenko, K. M | Kopylova, Tatyana N | Kokhanenko, Andrey P | Nikonova, Elena N | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    16.
    Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko, O. I. Kukenov

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Kukenov, Olzhas I | Dirko, Vladimir V.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    17.
    Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko [et al.]

    by Dirko, Vladimir V | Lozovoy, Kirill A | Kokhanenko, Andrey P | Kukenov, Olzhas I | Korotaev, Alexander G | Voytsekhovskiy, Alexander V.

    Source: NanomaterialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    18.
    Dependence of Ge/Si avalanche photodiode performance on the thickness and doping concentration of the multiplication and absorption layers H. Deeb, K. I. Khomyakova, A. P. Kokhanenko [et al.]

    by Deeb, Hazem | Khomyakova, Kristina I | Kokhanenko, Andrey P | Douhan, Rahaf M. H | Lozovoy, Kirill A.

    Source: InorganicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    19.
    Growth of epitaxial SiSn films with high Sn content for IR converters V. A. Timofeev, A. I. Nikiforov, A. P. Kokhanenko [et.al.]

    by Timofeev, V. A | Kokhanenko, Andrey P | Tuktamyshev, Artur R | Mashanov, Vladimir I | Loshkarev, Ivan D | Novikov, Vladimir A | Nikiforov, Alexander I.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    20.
    Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy V. G. Satdarov, A. V. Voitsekhovskii, A. P. Kokhanenko, K. A. Lozovoy

    by Satdarov, Vadim G | Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    21.
    Controlling of Ge quantum dots arrays parameters in Ge/Si nanoheterostructures grown by molecular beam epitaxy method V. G. Satdarov, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Kalin, Eugeniy A | Satdarov, Vadim G | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    22.
    Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii

    by Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    23.
    Nanostructures with Ge-Si quantum dots for infrared photodetectors I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.]

    by Fitsych, Olena I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V | Izhnin, Igor I.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    24.
    Growth of germanium quantum dots on oxidized silicon surface K. A. Lozovoy, A. P. Kokhanenko, N. Yu. Akimenko [et al.]

    by Kokhanenko, Andrey P | Akimenko, Nataliya Yu | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill A.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    25.
    Admittance of organic LED structures with an emission YAK-203 layer A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    26.
    Single-photon avalanche diode detectors based on group IV nanostructures I. I. Izhnin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Douhan, Rahaf M. H | Dirko, Vladimir V | Fitsych, Olena I.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    27.
    Admittance Spectroscopy for the Research of Germanium-on-Silicon Quantum Dot Structures Parameters V. G. Satdarov, A. V. Voytsekhovskiy, A. P. Kokhanenko и др.

    by Satdarov, Vadim G | Kokhanenko, Andrey P | Kalin, Eugeniy A | Nikiforov, Alexander I | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    28.
    Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots I. I. Izhnin, O. I. Fitsych, A. A. Pishchagin [et.al.]

    by Izhnin, Igor I | Pishchagin, Anton A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Nikiforov, Alexander I | Fitsych, Olena I.

    Source: Nanoscale research lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    29.
    Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semicon­ductor sensing unit A. V. Barko, A. V. Voitsekhovskii, A. G. Levashkin, A. P. Kokhanenko

    by Barko, A. V | Levashkin, A. G | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    30.
    Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions K. A. Lozovoy, A. V. Voitsekhovskii, A. P. Kokhanenko, V. G. Satdarov

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Satdarov, Vadim G | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    31.
    Spectral characteristics of Si:Ge and Hg1–xCdхTe heterostructures A. V. Yatskiy, K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskiy

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Yatskiy, Alexey V | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    32.
    Ge/Si avalanche photodiodes dark current K. I. Khomyakova, R. M. Douhan, H. Deeb [et al.]

    by Khomyakova, Kristina I | Douhan, Rahaf M. H | Deeb, Hazem | Kokhanenko, Andrey P | Lozovoy, Kirill A.

    Source: Актуальные проблемы радиофизики АПР-2023 : 10-я Международная научно-практическая конференция, 26-29 сентября 2023 года, г. Томск : сборник трудов конференцииMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    33.
    The surface roughening of GaN by wet chemical etching D. I. Zasukhin, D. D. Karimbaev, A. P. Kokhanenko, O. V. Kharapudchenko

    by Zasukhin, D. I | Kokhanenko, Andrey P | Kharapudchenko, Olga V | Karimbaev, D. D | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    34.
    Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Satdarov, Vadim G | Pchelyakov, Oleg P | Nikiforov, Alexander I | Lozovoy, Kirill A | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Физический факультет Кафедра физики полупроводников | Томский государственный университет Научное управление Лаборатории НУ.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    35.
    Ge/Si elongated quantum dots formation modelling with respect to the energy of edges A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii

    by Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    36.
    Si/Ge-based photosensitive nanoheterostructures for optical communication systems K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Turapin, Alexey M | Satdarov, Vadim G | Kalin, Eugeniy A | Lozovoy, Kirill A | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    37.
    Parameters comparison between quantum dot infrared detectors of Ge/Si and HgCdTe detectors R. M. H. Douhan, A. P. Kokhanenko, K. A. Lozovoy

    by Douhan, Rahaf M. H | Kokhanenko, Andrey P | Lozovoy, Kirill A.

    Source: Актуальные проблемы радиофизики АПР 2019 : 8-я Международная научно-практическая конференция, 1-4 октября 2019 года, г. Томск : сборник трудов конференцииMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    38.
    The growth of SiGe nanostructures by molecular beam epitaxy E. A. Kalin, V. G. Satdarov, A. V. Voytsekhovskiy, A. P. Kokhanenko

    by Kalin, Eugeniy A | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Satdarov, Vadim G | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    39.
    Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition D. V. Lyapunov, A. A. Pishchagin, D. V. Grigoryev [et.al.]

    by Lyapunov, D. V | Grigoryev, Denis V | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Iznin, I. I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Pishchagin, Anton A | Mikhailov, Nikolay N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    40.
    Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    41.
    Influence of edge energy on modeling the growth kinetics of quantum dots K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: Crystal growth and designMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    42.
    Performance analysis of multilayer Ge/Si photodetector with quantum dots R. M. Dukhan, A. P. Kokhanenko, K. A. Lozovoy

    by Dukhan, Rahaf M. H | Kokhanenko, Andrey P | Lozovoy, Kirill A.

    Source: Proceedings of SPIEMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    43.
    Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges K. A. Lozovoy, A. A. Pishchagin, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Pishchagin, Anton A.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    44.
    Interaction between islands in kinetic models of epitaxial growth of quantum dots I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.]

    by Izhnin, Igor I | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    45.
    Molecular dynamics simulations of the growth of Ge on Si Y. Zhoua, A. Lloyd, R. Smith [et al.]

    by Lloyd, Adam | Smith, Roger | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Zhoua, Ying.

    Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    46.
    Kinetics of epitaxial formation of nanostructures by Frank-van der Merwe, Volmer-Weber and Stranski-Krastanow growth modes K. A. Lozovoy, A. G. Korotaev, A. P. Kokhanenko [et al.]

    by Korotaev, Alexander G | Kokhanenko, Andrey P | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill A.

    Source: Surface and coatings technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    47.
    Single‑photon avalanche diode detectors based on group IV materials I. I. Izhnin, K. A. Lozovoy, A. P. Kokhanenko [et al.]

    by Izhnin, Igor I | Lozovoy, Kirill A | Kokhanenko, Andrey P | Khomyakova, Kristina I | Douhan, Rahaf M. H | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Akimenko, Nataliya Yu.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    48.
    Theoretical and experimental comparison of multilayer Ge/Si photodetectors with quantum dots R. M. Douhan, A. P. Kokhanenko, K. A. Lozovoy, H. Deeb

    by Douhan, Rahaf M. H | Kokhanenko, Andrey P | Lozovoy, Kirill A | Deeb, Hazem.

    Source: Актуальные проблемы радиофизики АПР-2021 : 9-я Международная научно-практическая конференция, 20-22 октября 2021 года, г. Томск : сборник трудов конференцииMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    49.
    Single-element 2D materials beyond graphene: methods of epitaxial synthesis K. A. Lozovoy, I. I. Izhnin, A. P. Kokhanenko [et al.]

    by Lozovoy, Kirill A | Izhnin, Igor I | Kokhanenko, Andrey P | Dirko, Vladimir V | Vinarskiy, Vladimir P | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Akimenko, Nataliya Yu.

    Source: NanomaterialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    50.
    Single-element 2D materials beyond graphene: Methods of epitaxial synthesis K. A. Lozovoy, I. I. Izhnin, A. P. Kokhanenko и др.

    by Lozovoy, Kirill A | Izhnin, Igor I | Kokhanenko, Andrey P | Dirko, Vladimir V | Vinarskiy, Vladimir P | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Akimenko, Nataliya Yu.

    Source: Nanotechnologies and nanomaterials: Selected Papers from CCMR. Vol. 2Material type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :