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Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition D. V. Lyapunov, A. A. Pishchagin, D. V. Grigoryev [et.al.]

Contributor(s): Lyapunov, D. V | Grigoryev, Denis V | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Iznin, I. I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Pishchagin, Anton A | Mikhailov, Nikolay NMaterial type: ArticleArticleSubject(s): эпитаксиальные пленки | молекулярно-лучевая эпитаксияGenre/Form: статьи в журналах Online resources: Click here to access online In: Journal of Physics: Conference Series Vol. 741. P. 012097 (1-5)Abstract: In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films
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In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films

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