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The surface roughening of GaN by wet chemical etching D. I. Zasukhin, D. D. Karimbaev, A. P. Kokhanenko, O. V. Kharapudchenko

Contributor(s): Zasukhin, D. I | Kokhanenko, Andrey P | Kharapudchenko, Olga V | Karimbaev, D. D | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоникиMaterial type: ArticleArticleSubject(s): нитрид галлия | химическое травление | шероховатость поверхностиGenre/Form: статьи в журналах Online resources: Click here to access online In: Известия высших учебных заведений. Физика Т. 58, № 10/3. С. 240-242Abstract: Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based LEDs. Many methods have been carried out to increase the external efficiency, including roughening the surface of the LED. In this study, we proposed an approach of wet chemical etching in KOH and K2S2O8 mixed solutions for roughening the surface of GaN. An analysis on change the surface of GaN is described as a function of etching time.
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Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based LEDs. Many methods have been carried out to increase the external efficiency, including roughening the surface of the LED. In this study, we proposed an approach of wet chemical etching in KOH and K2S2O8 mixed solutions for roughening the surface of GaN. An analysis on change the surface of GaN is described as a function of etching time.

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