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Theoretical and experimental comparison of multilayer Ge/Si photodetectors with quantum dots R. M. Douhan, A. P. Kokhanenko, K. A. Lozovoy, H. Deeb

Contributor(s): Douhan, Rahaf M. H | Kokhanenko, Andrey P | Lozovoy, Kirill A | Deeb, HazemMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): фотодетекторы | квантовые точки | темновой токGenre/Form: статьи в сборниках Online resources: Click here to access online In: Актуальные проблемы радиофизики АПР-2021 : 9-я Международная научно-практическая конференция, 20-22 октября 2021 года, г. Томск : сборник трудов конференции С. 223-224Abstract: The work discusses multilayer infrared photodetectors with quantum dots of germanium on silicon. It compares the theoretical calculations results of the dark current density of multilayer photodetector with Ge/Si quantum dots with the experimental results from previous research
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The work discusses multilayer infrared photodetectors with quantum dots of germanium on silicon. It compares the theoretical calculations results of the dark current density of multilayer photodetector with Ge/Si quantum dots with the experimental results from previous research

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