Dark current and detectivity of multilayer Ge/Si photodetector with quantum dots R. M. H. Douhan, A. P. Kokhanenko, K. A. Lozovoy
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ArticleContent type: Текст Media type: электронный Subject(s): фотодетекторы | квантовые точкиGenre/Form: статьи в сборниках Online resources: Click here to access online
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Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts P. 19-20Abstract: Since the demonstration of molecular beam epitaxy which widened the ability to establish more applications based on semiconductor materials, and after the big success of quantum well structures for infrared detection, a lot of attention has been paid to the quantum discoveries [1], this has stimulated the development of quantum dot structures and its ability for infrared detection. In the past decades the quantum dot structure has proven their efficiency in comparison to other types of semiconductors and they have become an interesting field for research because of their high photoconductive gain, low dark current and the ability to operate under increasing temperature conditions.
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Since the demonstration of molecular beam epitaxy which widened the ability to establish more applications based on semiconductor materials, and after the big success of quantum well structures for infrared detection, a lot of attention has been paid to the quantum discoveries [1], this has stimulated the development of quantum dot structures and its ability for infrared detection. In the past decades the quantum dot structure has proven their efficiency in comparison to other types of semiconductors and they have become an interesting field for research because of their high photoconductive gain, low dark current and the ability to operate under increasing temperature conditions.
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