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    51.
    Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko, V. G. Satdarov

    by Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Satdarov, Vadim G | Lozovoy, Kirill A | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    52.
    GE/SI quantum dots formation by the method of molecular beam epitaxy K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko и др.

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Satdarov, Vadim G | Kalin, Eugeniy A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Научные подразделения РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    53.
    Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots A. A. Pishchagin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Pishchagin, Anton A | Kokhanenko, Andrey P | Serokhvostov, V. Yu | Dzyadukh, Stanislav M | Nikiforov, Alexander I | Voytsekhovskiy, Alexander V.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    54.
    Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis I. I. Izhnin, I. I. Syvorotka, O. I. Fitsych [et al.]

    by Syvorotka, I. I | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Mynbaev, Karim D | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G.

    Source: Semiconductor science and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    55.
    Admittance of barrier structures based on mercury cadmium telluride A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    56.
    Accumulation of arsenic implantation‑induced donor defects in Hg0.7Cd0.3Te heteroepitaxial structures I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et al.]

    by Izhnin, Igor I | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Fitsych, Olena I | Świątek, Zbigniew | Jakiela, Rafal.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    57.
    Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation V. G. Sredin, A. V. Voytsekhovskiy, A. P. Melekhov, R. S. Ramakoti

    by Sredin, Victor G | Voytsekhovskiy, Alexander V | Melekhov, Andrey P | Ramakoti, Ravi S.

    Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    58.
    Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    59.
    Determination of the parameters of multi-carrier spectrum in CdHgTe. II. Discrete mobility spectrum analysis I. I. Izhnin, A. V. Voitsekhovskii, A. G. Korotaev, K. D. Mynbaev

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    60.
    Unipolar barrier structures based on HgCdTe for infrared detection A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Kashirskii, Danila E | Lozovoy, Kirill A | Dirko, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu.

    Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    61.
    Single element 2D materials and methods of their epitaxial synthesis I. I. Izhnin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V | Vinarskiy, Vladimir P | Fitsych, Olena I.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    62.
    Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko [et al.]

    by Dirko, Vladimir V | Lozovoy, Kirill A | Kokhanenko, Andrey P | Kukenov, Olzhas I | Korotaev, Alexander G | Voytsekhovskiy, Alexander V.

    Source: NanomaterialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    63.
    Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth K. A. Lozovoy, V. V. Dirko, V. P. Vinarskiy [et al.]

    by Lozovoy, Kirill A | Dirko, Vladimir V | Vinarskiy, Vladimir P | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Akimenko, Nataliya Yu.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    64.
    High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Dirko, Vladimir V | Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    65.
    Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots I. I. Izhnin, O. I. Fitsych, A. A. Pishchagin [et.al.]

    by Izhnin, Igor I | Pishchagin, Anton A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Nikiforov, Alexander I | Fitsych, Olena I.

    Source: Nanoscale research lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    66.
    Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voytsekhovskiy, K. A. Lozovoy [et.al.]

    by Grigoryev, Denis V | Lozovoy, Kirill A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Dvoretsky, Sergei A | Voytsekhovskiy, Alexander V.

    Source: Proceedings of SPIEMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    67.
    Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic I. I. Izhnin, S. A. Dvoretsky, K. D. Mynbaev [et.al.]

    by Dvoretsky, Sergei A | Mynbaev, Karim D | Fitsych, Olena I | Mikhailov, Nikolay N | Varavin, Vasilii S | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Sheregii, E | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Journal of applied physicsMaterial type: Article Article; Format: electronic available online remote; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    68.
    The relaxation of electrophysical properties of MCT epitaxial films after influence of a high frequency nanosecond volume discharge in atmospheric pressure air P. A. Ermachenkov, D. V. Grigoryev, A. V. Voytsekhovskiy [et al.]

    by Grigoryev, Denis V | Voytsekhovskiy, Alexander V | Tarasenko, Viktor Fedotovich | Ripenko, Vasilii S | Shulepov, Mikhail A | Erofeev, Mikhail V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Ermachenkov, P. A.

    Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    69.
    Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii

    by Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    70.
    Admittance of organic LED structures with an emission YAK-203 layer A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    71.
    Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh и др.

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    72.
    Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions K. A. Lozovoy, A. V. Voitsekhovskii, A. P. Kokhanenko, V. G. Satdarov

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Satdarov, Vadim G | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    73.
    Spectral characteristics of Si:Ge and Hg1–xCdхTe heterostructures A. V. Yatskiy, K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskiy

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Yatskiy, Alexey V | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    74.
    Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Kurbanov, Kurban R.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    75.
    Nanosize radiation defects in arsenic implanted HgCdTe epitaxial films of n- and p-type studied with TEM/HRTEM I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.]

    by Izhnin, Igor I | Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    76.
    Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy V. G. Satdarov, A. V. Voitsekhovskii, A. P. Kokhanenko, K. A. Lozovoy

    by Satdarov, Vadim G | Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    77.
    Admittance Spectroscopy for the Research of Germanium-on-Silicon Quantum Dot Structures Parameters V. G. Satdarov, A. V. Voytsekhovskiy, A. P. Kokhanenko и др.

    by Satdarov, Vadim G | Kokhanenko, Andrey P | Kalin, Eugeniy A | Nikiforov, Alexander I | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    78.
    Electro-physical characteristics of MIS structures with HgTe-based single quantum wells S. Dzyadukh, S. Nesmelov, A. Voytsekhovskiy, D. Gorn

    by Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    79.
    Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semicon­ductor sensing unit A. V. Barko, A. V. Voitsekhovskii, A. G. Levashkin, A. P. Kokhanenko

    by Barko, A. V | Levashkin, A. G | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    80.
    Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ.

    Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    81.
    Properties of arsenic-implanted Hg1-xCdxTe MBE films I. I. Izhnin, A. V. Voitsekhovskiі, A. G. Korotaev [et.al.]

    by Izhnin, Igor I | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Yakushev, Maxim V | Voytsekhovskiy, Alexander V | Jakiela, Rafal | Trzyna, Malgorzata.

    Source: EPJ Web of ConferencesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    82.
    Controlling of Ge quantum dots arrays parameters in Ge/Si nanoheterostructures grown by molecular beam epitaxy method V. G. Satdarov, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Kalin, Eugeniy A | Satdarov, Vadim G | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    83.
    Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe I. I. Izhnin, K. D. Mynbaev, A. V. Voytsekhovskiy, A. G. Korotaev

    by Izhnin, Igor I | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G.

    Source: Journal of applied physicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    84.
    Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et al.]

    by Izhnin, Igor I | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Fitsych, Olena I | Świątek, Zbigniew | Izhnin, Igor I.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    85.
    Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films A. V. Voytsekhovskiy, I. I. Izhnin, K. D. Mynbaev [et al.]

    by Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mynbaev, Karim D | Morgiel, Jerzy | Świątek, Zbigniew | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V.

    Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    86.
    Unipolar semiconductor barrier structures for infrared photodetector arrays (Review) I. D. Burlakov, N. A. Kulchitskii, A. V. Voytsekhovskiy [et al.]

    by Burlakov, I. D | Kulchitskii, N. A | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    87.
    Admittance of pentacene-based MIS-structures with two-layer insulator SiO2-Al2O3 A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    88.
    Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    89.
    Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3–5 μm spectral range A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Technical physics lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    90.
    The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V.

    Source: Technical physics lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    91.
    Growth of germanium quantum dots on oxidized silicon surface K. A. Lozovoy, A. P. Kokhanenko, N. Yu. Akimenko [et al.]

    by Kokhanenko, Andrey P | Akimenko, Nataliya Yu | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill A.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    92.
    Single-photon avalanche diode detectors based on group IV nanostructures I. I. Izhnin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Douhan, Rahaf M. H | Dirko, Vladimir V | Fitsych, Olena I.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    93.
    Nanostructures with Ge-Si quantum dots for infrared photodetectors I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.]

    by Fitsych, Olena I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V | Izhnin, Igor I.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    94.
    Background donor concentration in HgCdTe M. Pociask-Bialy, I. I. Izhnin, A. V. Voytsekhovskiy [et.al.]

    by Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Mynbaev, Karim D | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    95.
    Modification of electrophysical parameters of HgCdTe epitaxial heterostructures under the action of a pulsed nanosecond discharge in gas environment at atmospheric-pressure D. V. Grigoryev, A. V. Voytsekhovskii, V. F. Tarasenko [et.al.]

    by Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Erofeev, Mikhail V | Ripenko, Vasilii S | Dvoretsky, Sergei A | Voytsekhovskiy, Alexander V.

    Source: Pulsed lasers and laser applications AMPL-2017 : the 13 International conference, September 10-15, 2017, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    96.
    Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Nesmelov, Sergey N | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : AbstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    97.
    Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air D. V. Grigoryev, A. V. Voytsekhovskii, K. A. Lozovoy [et.al.]

    by Grigoryev, Denis V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Voytsekhovskiy, Alexander V.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    98.
    Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Nesmelov, Sergey N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    99.
    Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    100.
    Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Materials research expressMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :