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101.
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Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type:  Article; Format:
electronic
available online
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Not fiction
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Specialized;
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102.
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Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et.al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Fitsych, Olena I. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
available online
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103.
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Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study O. Yu. Bonchyk, H. V. Savytskyy, Z. Świątek [et al.] by Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Jerzy | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Fitsych, Olena I | Varavin, Vasilii S | Bonchyk, A. Yu | Dvoretsky, Sergei A | Marin, Denis V | Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
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104.
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105.
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Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K A. V. Voytsekhovskiy, S. N. Nesmelov, V. A. Novikov [et al.] by Nesmelov, Sergey N | Novikov, Vadim A | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Ivonin, Ivan V | Degtyarenko, Konstantin M | Tereshchenko, Evgeny V | Voytsekhovskiy, Alexander V. Source: Thin solid filmsMaterial type: Article; Format:
electronic
available online
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106.
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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing A. G. Korotaev, A. V. Voytsekhovskiy, I. I. Izhnin [et al.] by Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mynbaev, Karim D | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Korotaev, Alexander G | Sidorov, Georgiy Yu. Source: Surface and coatings technologyMaterial type: Article; Format:
electronic
available online
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107.
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Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Sidorov, Georgiy Yu | Varavin, Vasilii S | Vasilev, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Dzyadukh, Stanislav M. Source: Russian physics journalMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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108.
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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et al.] by Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Syvorotka, I. I | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu | Savytskyy, Hrygory V | Izhnin, Igor I. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
available online
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109.
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110.
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Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride I. Izhnin, O. I. Fitsych, Z. Świątek [et al.] by Fitsych, Olena I | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Yakushev, Maxim V | Marin, Denis V | Varavin, Vasilii S | Dvoretsky, Sergei A | Izhnin, Igor I. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
available online
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111.
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Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition D. V. Lyapunov, A. A. Pishchagin, D. V. Grigoryev [et.al.] by Lyapunov, D. V | Grigoryev, Denis V | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Iznin, I. I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Pishchagin, Anton A | Mikhailov, Nikolay N. Source: Journal of Physics: Conference SeriesMaterial type: Article; Format:
electronic
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112.
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113.
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114.
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115.
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116.
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Ge/Si elongated quantum dots formation modelling with respect to the energy of edges A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii by Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
available online
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Not fiction
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117.
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118.
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119.
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120.
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121.
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122.
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Electrical properties of the V-defects of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.] by Novikov, Vadim A | Bezrodnyy, Dmitriy A | Voytsekhovskiy, Alexander V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Grigoryev, Denis V. Source: 17th International Conference on II-VI Compounds and Related Materials, Paris, 13-18 September 2015 : conference bookMaterial type: Article; Format:
electronic
available online
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123.
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124.
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125.
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126.
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Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Nesmelov, Sergey N. Source: Journal of communications technology and electronicsMaterial type: Article; Format:
electronic
available online
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127.
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Comparison of background donor concentration in HgCdTe grown with different technologies A. Y. Bonchyk, I. A. Mohylyak, H. V. Savytskyy [et.al.] by Bonchyk, A. Yu | Savytskyy, Hrygory V | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mohylyak, I. A. Source: XV International conference on physics and technology of thin films and nanosystems, Ivanо-Frankivsk, May, 11-16, 2015 : book of abstractsMaterial type: Article; Format:
electronic
available online
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128.
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Influence of a high-frequency pulsed nanosecond diffusion discharge in the nitrogen atmosphere on the electrical characteristics of a CdHgTe epitaxial films D. V. Grigoryev, A. V. Voytsekhovskii, A. G. Korotaev [et al.] by Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Lyapunov, D. V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Erofeev, Mikhail V | Ripenko, Vasilii S | Dvoretsky, Sergei A | Grigoryev, Denis V | Mikhailov, Nikolay N. Source: Journal of Physics: Conference SeriesMaterial type: Article; Format:
electronic
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129.
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130.
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Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Nesmelov, Sergey N. Source: Physica status solidi CMaterial type: Article; Format:
electronic
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131.
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132.
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Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voitsekhovskii, K. A. Lozovoy [et.al.] by Grigoryev, Denis V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Voytsekhovskiy, Alexander V. Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
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Not fiction
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133.
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Background donor concentration in HgCdTe I. I. Izhnin, K. D. Mynbaev, A. V. Voytsekhovskiy [et.al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Pociask-Bialy, Malgorzata | Dvoretsky, Sergei A | Mynbaev, Karim D | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
available online
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134.
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Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
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available online
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Other title: Вольт-фарадные характеристики CdHgTe МДП-структур с одиночными квантовыми ямами на основе HgTe.Online access: Click here to access online Availability: No items available :
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135.
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Light emission from CdHgTe–based nanostructures K. D. Mynbaev, A. V. Shilyaev, N. L. Bazhenov [et.al.] by Mynbaev, Karim D | Bazhenov, N. L | Izhnin, A. I | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Shilyaev, A. V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Научное управление Лаборатории НУ. Source: Materials physics and mechanicsMaterial type: Article; Format:
electronic
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136.
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Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers A. V. Voytsekhovskiy, N. A. Kulchitskii, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Kulchitskii, N. A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu. Source: Journal of communications technology and electronicsMaterial type: Article; Format:
electronic
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137.
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138.
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Investigation of the effect of soft X-ray radiation on the electrophysical characteristics of epitaxial layers n-Hg1-xCdxTe A. V. Voytsekhovskiy, V. G. Sredin, O. B. Anan'in [et al.] by Sredin, Victor G | Ananin, Oleg B | Melekhov, Andrey P | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Yurchak, V. A | Voytsekhovskiy, Alexander V. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
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139.
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140.
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141.
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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air A. G. Korotaev, D. V. Grigoryev, A. V. Voitsekhovskii [et al.] by Grigoryev, Denis V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Ripenko, Vasilii S | Shulepov, Mikhail A | Erofeev, Mikhail V | Yakushev, Maxim V | Dvoretsky, Sergei A | Korotaev, Alexander G | Mikhailov, Nikolay N | Varavin, Vasilii S. Source: Surface and coatings technologyMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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142.
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Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V | Voytsekhovskiy, Alexander V. Source: Journal of electronic materialsMaterial type: Article; Format:
electronic
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143.
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144.
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Single‑photon avalanche diode detectors based on group IV materials I. I. Izhnin, K. A. Lozovoy, A. P. Kokhanenko [et al.] by Izhnin, Igor I | Lozovoy, Kirill A | Kokhanenko, Andrey P | Khomyakova, Kristina I | Douhan, Rahaf M. H | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Akimenko, Nataliya Yu. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
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145.
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Single-element 2D materials beyond graphene: methods of epitaxial synthesis K. A. Lozovoy, I. I. Izhnin, A. P. Kokhanenko [et al.] by Lozovoy, Kirill A | Izhnin, Igor I | Kokhanenko, Andrey P | Dirko, Vladimir V | Vinarskiy, Vladimir P | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Akimenko, Nataliya Yu. Source: NanomaterialsMaterial type: Article; Format:
electronic
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146.
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147.
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148.
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