Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, I. I. Izhnin
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ArticleSubject(s): ионная имплантация | эпитаксиальные пленки | приповерхностные слоиGenre/Form: статьи в журналах Online resources: Click here to access online
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Journal of Physics: Conference Series Vol. 830. P. 012081 (1-4)Abstract: The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was investigated. The changes of the conductivity type in the near-surface layer of HgCdTe after ion implantation of boron and etching by ions of argon were detected. The concentrations of the major charge carriers in the near-surface layer of the epitaxial films after ion implantation and after ion etching were close to 5.88×1016 cm-3 and 2.47×1017 cm-3, respectively.
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The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was investigated. The changes of the conductivity type in the near-surface layer of HgCdTe after ion implantation of boron and etching by ions of argon were detected. The concentrations of the major charge carriers in the near-surface layer of the epitaxial films after ion implantation and after ion etching were close to 5.88×1016 cm-3 and 2.47×1017 cm-3, respectively.
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