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  • Your search returned 114 results.

    1.
    The modelling of gas analyzers for ecological control based on spectral methods O. K. Voitsekhovskaya, A. V. Voitsekhovskii

    by Voitsekhovskaya, Olga K | Voytsekhovskiy, Alexander V.

    Source: Fundamental and applied problems of environmental protection. Vol. 1 : International conference, September, 12-16, 1995, Tomsk : abstractsMaterial type: Article Article; Format: print ; Literary form: Not fiction ; Audience: Specialized; Availability: No items available :
    2.
    Annealing kinetics of radiation defects in boron-implanted p-Hg1-xCdxTe N. Talipov, A. Voitsekhovskii

    by Talipov, Niyaz Kh | Voytsekhovskiy, Alexander V.

    Source: Semiconductor science and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    3.
    Ion implantation in narrow-gap CdxHg1–xTe solid solutions N. Kh. Talipov, A. V. Voytsekhovskii

    by Talipov, Niyaz Kh | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    4.
    Analysis of the nBn-type barrier structures for infrared photodiode detectors A. V. Voitsekhovskii, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    5.
    Hysteresis phenomena in mis structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator SiO2/Si3N4 A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    6.
    Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    7.
    High-sensitive two-layer photoresistors based on р-CdxHg1-HGxTe with a converted near-surface layer N. D. Ismailov, N. Kh. Talipov, A. V. Voitsekhovskii

    by Ismailov, N. D | Talipov, Niyaz Kh | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    8.
    Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Journal of physics and chemistry of solidsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    9.
    Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    10.
    Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    11.
    Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii

    by Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    12.
    Peculiarities of modeling the frequency dependences of admittance of MIS structure based on organic P3HT film with an insulator Al2O3 layer A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    13.
    Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    14.
    Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, I. I. Izhnin

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Izhnin, Igor I | Nesmelov, Sergey N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    15.
    Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges K. A. Lozovoy, A. A. Pishchagin, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Pishchagin, Anton A.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    16.
    UV photodetectors based on wide-gap AlGaN semiconductors A. V. Voytsekhovskii, S. N. Nesmelov

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический университет Научные подразделения СФТИ.

    Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    17.
    Theoretical model for description of single CdHgTe quantum well photoluminescense spectra A. V. Voitsekhovskii, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    18.
    Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices S. Dzyadukh, S. Nesmelov, A. Voytsekhovskiy, D. Gorn

    by Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    19.
    Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells A. V. Voitsekhovskii, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Advanced Materials ResearchMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    20.
    Electro-physical characteristics of MIS structures with HgTe-based single quantum wells S. Dzyadukh, S. Nesmelov, A. Voytsekhovskiy, D. Gorn

    by Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    21.
    Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semicon­ductor sensing unit A. V. Barko, A. V. Voitsekhovskii, A. G. Levashkin, A. P. Kokhanenko

    by Barko, A. V | Levashkin, A. G | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    22.
    Development of a high-voltage waveguide photodetector comprised of Schottky diodes and based on the Ge–Si structure with Ge quantum dots for portable thermophotovoltaic converters N. A. Pakhanov, O. P. Pchelyakov, A. I. Yakimov, A. V. Voitsekhovskii

    by Pakhanov, N. A | Yakimov, Andrew I | Voytsekhovskiy, Alexander V | Pchelyakov, Oleg P.

    Source: Optoelectronics, instrumentation and data processingMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    23.
    Description of electrophysical characteristics for MIS-structures with CdHgTe-based quantum wells under the 8–300 K A. V. Voitsekhovskii, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    24.
    Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range A. V. Voytsekhovskiy, N. A. Kulchitsky, S. N. Nesmelov, S. M. Dzyadukh

    by Kulchitsky, N. A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    25.
    Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Other title: Вольт-фарадные характеристики CdHgTe МДП-структур с одиночными квантовыми ямами на основе HgTe.Online access: Click here to access online Availability: No items available :
    26.
    Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voitsekhovskii, K. A. Lozovoy [et.al.]

    by Grigoryev, Denis V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Voytsekhovskiy, Alexander V.

    Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    27.
    Kinetics of epitaxial formation of nanostructures by Frank-van der Merwe, Volmer-Weber and Stranski-Krastanow growth modes K. A. Lozovoy, A. G. Korotaev, A. P. Kokhanenko [et al.]

    by Korotaev, Alexander G | Kokhanenko, Andrey P | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill A.

    Source: Surface and coatings technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    28.
    Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    29.
    Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation V. G. Sredin, R. Ramakoti, O. B. Ananin [et al.]

    by Sredin, Victor G | Ramakoti, Ravi | Ananin, Oleg B | Voytsekhovskiy, Alexander V | Melekhov, Andrey P.

    Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedingsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    30.
    Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe M. Pociask-Bialy, I. Izhnin, A. Voitsekhovskii [et.al.]

    by Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Izhnin, Igor I.

    Source: EPJ Web of ConferencesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    31.
    Growth of germanium quantum dots on oxidized silicon surface K. A. Lozovoy, A. P. Kokhanenko, N. Yu. Akimenko [et al.]

    by Kokhanenko, Andrey P | Akimenko, N. Yu | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill A.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    32.
    Impedance characterization of organic light-emitting structures with thermally activated delayed fluorescence A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Voytsekhovskiy, Alexander V.

    Source: Physica status solidi A : applications and materials scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    33.
    Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Lyapunov, D. V | Nesmelov, Sergey N.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    34.
    Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Thin solid filmsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    35.
    Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Physical chemistry chemical physicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    36.
    Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Thin solid filmsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    37.
    Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air D. V. Grigoryev, A. V. Voytsekhovskii, K. A. Lozovoy [et.al.]

    by Grigoryev, Denis V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Voytsekhovskiy, Alexander V.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    38.
    Influence of edge energy on modeling the growth kinetics of quantum dots K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: Crystal growth and designMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    39.
    Comparison of background donor concentration in HgCdTe grown with different technologies A. Y. Bonchyk, I. A. Mohylyak, H. V. Savytskyy [et.al.]

    by Bonchyk, A. Yu | Savytskyy, Hrygory V | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mohylyak, I. A.

    Source: XV International conference on physics and technology of thin films and nanosystems, Ivanо-Frankivsk, May, 11-16, 2015 : book of abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    40.
    Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Nesmelov, Sergey N.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    41.
    Molecular dynamics simulations of the growth of Ge on Si Y. Zhoua, A. Lloyd, R. Smith [et al.]

    by Lloyd, Adam | Smith, Roger | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Zhoua, Ying.

    Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    42.
    Electrical properties of the V-defects of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.]

    by Novikov, Vadim A | Bezrodnyy, Dmitriy A | Voytsekhovskiy, Alexander V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Grigoryev, Denis V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    43.
    Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe D. I. Gorn, A. V. Voitsekhovskii, S. M. Dzyadukh, S. N. Nesmelov

    by Gorn, Dmitriy Igorevich | Dzyadukh, Stanislav M | Nesmelov, Sergey N | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    44.
    Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods A. A. Pishchagin, K. A. Lozovoy, V. Y. Serokhvostov [et.al.]

    by Pishchagin, Anton A | Serokhvostov, V. Yu | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Nikiforov, Alexander I | Lozovoy, Kirill A.

    Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    45.
    Admittance of organic LED structures with an emission YAK-203 layer A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    46.
    Spectral characteristics of Si:Ge and Hg1–xCdхTe heterostructures A. V. Yatskiy, K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskiy

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Yatskiy, Alexey V | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    47.
    Nanostructures with Ge-Si quantum dots for infrared photodetectors I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.]

    by Fitsych, Olena I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V | Izhnin, Igor I.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    48.
    Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et.al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Pociask-Bialy, Malgorzata | Mynbaev, Karim D.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    49.
    Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots A. A. Pishchagin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Pishchagin, Anton A | Kokhanenko, Andrey P | Serokhvostov, V. Yu | Dzyadukh, Stanislav M | Nikiforov, Alexander I | Voytsekhovskiy, Alexander V.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    50.
    Electrical characteristics of epitaxial MCT after As+ implantation A. Voitsekhovskii, I. Izhnin, A. Korotaev [et.al.]

    by Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Lyapunov, D. V | Dvoretsky, Sergei A | Smirnov, P | Izhnin, Igor I.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :