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Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride I. Izhnin, O. I. Fitsych, Z. Świątek [et al.]
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ArticleSubject(s): молекулярно-лучевая эпитаксия | отжиг | мышьяк | теллурид кадмия-ртутиGenre/Form: статьи в журналах Online resources: Click here to access online
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Opto-electronics review Vol. 27, № 1. P. 14-17Abstract: Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted
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Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted
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