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    • Your search returned 38 results.

    1.
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    Electrical properties of the V-defects of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.]

    by Novikov, Vadim A | Bezrodnyy, Dmitriy A | Voytsekhovskiy, Alexander V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Grigoryev, Denis V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    2.
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    Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et.al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Fitsych, Olena I | Savytskyy, Hrygory V | Świątek, Zbigniew.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    3.
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    Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Semiconductor science and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    4.
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    An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    5.
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    Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra A. V. Voytsekhovskii, S. M. Dzyadukh, D. I. Gorn [et al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Physica scriptaMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    6.
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    TEM studies of structural defects in HgTe/HgCdTe quantum wells A. Yu. Bonchyk, H. V. Savytskyy, Z. Swiatek [et al.]

    by Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Y | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    7.
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    Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskii, S. N. Nesmelov [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    8.
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    Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    9.
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    Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs I. I. Izhnin, A. I. Izhnin, K. D. Mynbaev [et.al.]

    by Izhnin, A. I | Mynbaev, Karim D | Bazhenov, N. L | Shilyaev, A. V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    10.
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    Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films A. V. Voytsekhovskiy, I. I. Izhnin, I. I. Syvorotka [et al.]

    by Izhnin, Igor I | Syvorotka, I. I | Korotaev, Alexander G | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
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    11.
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    Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells I. I. Izhnin, I. I. Syvorotka, A. V. Voytsekhovskiy [et al.]

    by Syvorotka, I. I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Izhnin, Igor I.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    12.
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    Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates I. I. Izhnin, A. V. Voytsekhovsky, A. G. Korotaev [et.al.]

    by Izhnin, Igor I | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Voytsekhovskiy, Alexander V | Yakushev, Maxim V | Jakiela, Rafal.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    13.
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    Admittance of barrier structures based on mercury cadmium telluride A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    14.
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    Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy V. V. Rumyantsev, A. A. Razova, M. A. Fadeev [et al.]

    by Rumyantsev, Vladimir V | Razova, Anna A | Fadeev, Mikhail A | Utochkin, Vladimir V | Mikhailov, Nikolay N | Dvoretsky, Sergei A | Gavrilenko, Vladimir I | Morozov, Sergey V.

    Source: Optical engineeringMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    15.
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    Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    16.
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    Unipolar barrier structures based on HgCdTe for infrared detection A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Kashirskii, Danila E | Lozovoy, Kirill A | Dirko, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu.

    Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
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    17.
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    Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voytsekhovskiy, K. A. Lozovoy [et.al.]

    by Grigoryev, Denis V | Lozovoy, Kirill A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Dvoretsky, Sergei A | Voytsekhovskiy, Alexander V.

    Source: Proceedings of SPIEMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    18.
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    Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic I. I. Izhnin, S. A. Dvoretsky, K. D. Mynbaev [et.al.]

    by Dvoretsky, Sergei A | Mynbaev, Karim D | Fitsych, Olena I | Mikhailov, Nikolay N | Varavin, Vasilii S | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Sheregii, E | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Journal of applied physicsMaterial type: Article Article; Format: electronic available online remote; Audience: Specialized; Online access: Click here to access online Availability: No items available :
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    19.
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    Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh и др.

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    20.
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    Properties of arsenic-implanted Hg1-xCdxTe MBE films I. I. Izhnin, A. V. Voitsekhovskiі, A. G. Korotaev [et.al.]

    by Izhnin, Igor I | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Yakushev, Maxim V | Voytsekhovskiy, Alexander V | Jakiela, Rafal | Trzyna, Malgorzata.

    Source: EPJ Web of ConferencesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    21.
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    Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et al.]

    by Izhnin, Igor I | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Fitsych, Olena I | Świątek, Zbigniew | Izhnin, Igor I.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    22.
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    Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    23.
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    The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V.

    Source: Technical physics lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    24.
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    Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    25.
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    Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Materials research expressMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    26.
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    Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et.al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Fitsych, Olena I.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    27.
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    Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing A. G. Korotaev, A. V. Voytsekhovskiy, I. I. Izhnin [et al.]

    by Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mynbaev, Karim D | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Korotaev, Alexander G | Sidorov, Georgiy Yu.

    Source: Surface and coatings technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    28.
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    Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Sidorov, Georgiy Yu | Varavin, Vasilii S | Vasilev, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Dzyadukh, Stanislav M.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    29.
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    Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    30.
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    Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride I. Izhnin, O. I. Fitsych, Z. Świątek [et al.]

    by Fitsych, Olena I | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Yakushev, Maxim V | Marin, Denis V | Varavin, Vasilii S | Dvoretsky, Sergei A | Izhnin, Igor I.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    31.
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    Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition D. V. Lyapunov, A. A. Pishchagin, D. V. Grigoryev [et.al.]

    by Lyapunov, D. V | Grigoryev, Denis V | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Iznin, I. I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Pishchagin, Anton A | Mikhailov, Nikolay N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    32.
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    Distribution of the surface potential of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy, S. A. Dvoretsky

    by Novikov, Vadim A | Bezrodnyy, Dmitriy A | Dvoretsky, Sergei A | Grigoryev, Denis V | Томский государственный университет Научное управление Лаборатории НУ | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Applied physics lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    33.
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    Experimental study of NBνN barrier structures based on MBE n-HgCdTe for MWIR and LWIR photodetectors A. V. Voytsekhovskii, S. M. Dzyadukh, D. I. Gorn [et al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    34.
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    Influence of complex impact of the picosecond electron beam and volume discharge in atmospheric-pressure air on the electronic properties of MCT epitaxial films surface D. V. Grigoryev, V. A. Novikov, D. A. Bezrodnyy [et.al.]

    by Grigoryev, Denis V | Bezrodnyy, Dmitriy A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Dvoretsky, Sergei A | Novikov, Vadim A.

    Source: Proceedings of SPIEMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    35.
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    Background donor concentration in HgCdTe I. I. Izhnin, K. D. Mynbaev, A. V. Voytsekhovskiy [et.al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Pociask-Bialy, Malgorzata | Dvoretsky, Sergei A | Mynbaev, Karim D | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    36.
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    Light emission from CdHgTe–based nanostructures K. D. Mynbaev, A. V. Shilyaev, N. L. Bazhenov [et.al.]

    by Mynbaev, Karim D | Bazhenov, N. L | Izhnin, A. I | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Shilyaev, A. V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Научное управление Лаборатории НУ.

    Source: Materials physics and mechanicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    37.
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    Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers A. V. Voytsekhovskiy, N. A. Kulchitskii, S. N. Nesmelov [et al.]

    by Voytsekhovskiy, Alexander V | Kulchitskii, N. A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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    38.
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    Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V | Voytsekhovskiy, Alexander V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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