|
1.
|
|
|
2.
|
|
|
3.
|
|
|
4.
|
|
|
5.
|
|
|
6.
|
|
|
7.
|
|
|
8.
|
|
|
9.
|
UV photodetectors based on wide-gap AlGaN semiconductors A. V. Voytsekhovskii, S. N. Nesmelov by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический университет Научные подразделения СФТИ. Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
|
|
10.
|
|
|
11.
|
Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Other title: Вольт-фарадные характеристики CdHgTe МДП-структур с одиночными квантовыми ямами на основе HgTe.Online access: Click here to access online Availability: No items available :
|
|
12.
|
|
|
13.
|
|
|
14.
|
|
|
15.
|
|
|
16.
|
|
|
17.
|
|
|
18.
|
|
|
19.
|
|
|
20.
|
|
|
21.
|
|
|
22.
|
|
|
23.
|
|
|
24.
|
|
|
25.
|
Investigation of the effect of soft X-ray radiation on the electrophysical characteristics of epitaxial layers n-Hg1-xCdxTe A. V. Voytsekhovskiy, V. G. Sredin, O. B. Anan'in [et al.] by Sredin, Victor G | Ananin, Oleg B | Melekhov, Andrey P | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Yurchak, V. A | Voytsekhovskiy, Alexander V. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
|
|
26.
|
|
|
27.
|
|
|
28.
|
|
|
29.
|
|
|
30.
|
|
|
31.
|
|
|
32.
|
Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
|
|
33.
|
|
|
34.
|
|
|
35.
|
|
|
36.
|
|
|
37.
|
|
|
38.
|
Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Nesmelov, Sergey N | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : AbstractsMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
|
|
39.
|
Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K A. V. Voytsekhovskiy, S. N. Nesmelov, V. A. Novikov [et al.] by Nesmelov, Sergey N | Novikov, Vadim A | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Ivonin, Ivan V | Degtyarenko, Konstantin M | Tereshchenko, Evgeny V | Voytsekhovskiy, Alexander V. Source: Thin solid filmsMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
|
|
40.
|
Admittance of HgCdTe MIS structures with HgTe single quantum well I. I. Izhnin, E. I. Fitsych, S. N. Nesmelov [et.al.] by Izhnin, Igor I | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Fitsych, Olena I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: The International research and practice Conference “Nanotechnology and Nanomaterials” (NANO-2015) : abstracts book of participants of the International Summer School and International research and practice Conference, 26-29 August 2015Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
|
|
41.
|
Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voytsekhovskiy, K. A. Lozovoy [et.al.] by Grigoryev, Denis V | Lozovoy, Kirill A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Dvoretsky, Sergei A | Voytsekhovskiy, Alexander V. Source: Proceedings of SPIEMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
|
|
42.
|
Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Kurbanov, Kurban R. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
|
|
43.
|
Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Voytsekhovskiy, Alexander V. Source: VacuumMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
|
|
44.
|
Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator V. A. Novikov, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Chernikov, Evgeniy V | Kalygina, Vera M | Novikov, Vadim A. Source: Russian physics journalMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
|
|
45.
|
Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
|
|
46.
|
Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskii, S. N. Nesmelov [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
|
|
47.
|
Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Nesmelov, Sergey N. Source: Journal of communications technology and electronicsMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
|
|
48.
|
Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Nesmelov, Sergey N. Source: Physica status solidi CMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
|
|
49.
|
Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers A. V. Voytsekhovskiy, N. A. Kulchitskii, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Kulchitskii, N. A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu. Source: Journal of communications technology and electronicsMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
|
|
50.
|
Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V | Voytsekhovskiy, Alexander V. Source: Journal of electronic materialsMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
|