Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.]
Material type:
ArticleContent type: Текст Media type: электронный Subject(s): метод молекулярно-лучевой эпитаксии | электрические свойства | nBn-структурыGenre/Form: статьи в сборниках Online resources: Click here to access online
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International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book P. 44Abstract: The use of unipolar barrier architectures in infrared detectors based on HgCdTe grown by molecular beam epitaxy (MBE) provides significant technological advantages. Earlier, the authors of the manuscript presented the results of a study of dark currents [1] and admittance [2] of the first variants of MBE HgCdTe nBn structures. This paper presents the results of electrical characterization of nBn structures with parameters optimized for detection in the spectral ranges 3–5 (MWIR) and 8–12 (LWIR) µm.
В ст. ошибочно: Mikhilov N. N.
Библиогр.: 2 назв.
The use of unipolar barrier architectures in infrared detectors based on HgCdTe grown by molecular beam epitaxy (MBE) provides significant technological advantages. Earlier, the authors of the manuscript presented the results of a study of dark currents [1] and admittance [2] of the first variants of MBE HgCdTe nBn structures. This paper presents the results of electrical characterization of nBn structures with parameters optimized for detection in the spectral ranges 3–5 (MWIR) and 8–12 (LWIR) µm.
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