Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy O. Yu. Bonchyk, H. V. Savytskyy, I. I. Izhnin [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): имплантация мышьяка | просвечивающая электронная микроскопия | наноразмерные дефекты | эпитаксиальные пленки | HgCdTe пленкиGenre/Form: статьи в журналах Online resources: Click here to access online
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Applied nanoscience Vol. 10, № 12. P. 4971-4976Abstract: Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced
by implantation of arsenic ions with 190 keV and 350 keV energy and 1014
cm–2 fluence in molecular-beam epitaxy-grown
Hg0.7Cd0.3Te
films were performed. A similarity in defect pattern formed by arsenic implantation in Hg1−
xCdxTe with x ≈ 0.2
and x ≈ 0.3 straight after the implantation was observed with formation of three nano-size defect layers containing dislocation
loops of vacancy- and interstitial-types, single dislocations and lattice deformations. After post-implantation arsenic
activation annealing, most of these defects in our Hg0.7Cd0.3Te
films, in contrast to Hg0.8Cd0.2Te
films, disappeared. This
effect is explained by the reduced influence of the electric field of the graded-gap surface layer on the diffusion of charged
point defects under annealing.
Библиогр.: с. 4976
Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced
by implantation of arsenic ions with 190 keV and 350 keV energy and 1014
cm–2 fluence in molecular-beam epitaxy-grown
Hg0.7Cd0.3Te
films were performed. A similarity in defect pattern formed by arsenic implantation in Hg1−
xCdxTe with x ≈ 0.2
and x ≈ 0.3 straight after the implantation was observed with formation of three nano-size defect layers containing dislocation
loops of vacancy- and interstitial-types, single dislocations and lattice deformations. After post-implantation arsenic
activation annealing, most of these defects in our Hg0.7Cd0.3Te
films, in contrast to Hg0.8Cd0.2Te
films, disappeared. This
effect is explained by the reduced influence of the electric field of the graded-gap surface layer on the diffusion of charged
point defects under annealing.
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