Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): молекулярно-лучевая эпитаксия | барьерный слой | МДП-структуры | адмиттанс | nBn-структура | CdHgTeGenre/Form: статьи в журналах Online resources: Click here to access online
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Semiconductor science and technology Vol. 35, № 5. P. 055026 (1-7)Abstract: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
top of the contact layer of a mid-wave infrared nBn detector based on n-Hg1-xCdxTe grown by
molecular beam epitaxy on GaAs (013) substrates. It is shown that when creating a backward
electrode on the absorbing layer, the form of the capacitance–voltage characteristics depends not only
on the properties of the contact layer, but also on the properties of the barrier and absorbing layers.
An equivalent circuit of MIS structure based on nBn detector with mesa configuration is proposed. It
is shown that measurements of the admittance of MIS structures with mesa configuration allow one
to study the properties of the barrier layer in the nBn structure. The influence of infrared radiation on
the temperature dependence of the barrier layer resistance is studied.
Библиогр.: 42 назв.
Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
top of the contact layer of a mid-wave infrared nBn detector based on n-Hg1-xCdxTe grown by
molecular beam epitaxy on GaAs (013) substrates. It is shown that when creating a backward
electrode on the absorbing layer, the form of the capacitance–voltage characteristics depends not only
on the properties of the contact layer, but also on the properties of the barrier and absorbing layers.
An equivalent circuit of MIS structure based on nBn detector with mesa configuration is proposed. It
is shown that measurements of the admittance of MIS structures with mesa configuration allow one
to study the properties of the barrier layer in the nBn structure. The influence of infrared radiation on
the temperature dependence of the barrier layer resistance is studied.
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