E-catalog        

Библиогр.: 42 назв.

The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insulator, device nBn structures based on HgCdTe were fabricated. The layer parameters in the created structures provided the possibility of detection in the spectral range of 3–5 μm. Based on the analysis of the frequency dependences of the admittance, an equivalent circuit of nBn structures at small biases is proposed. The dependences of the equivalent circuit parameters on the area of the mesa structure and temperature are determined. The properties of high-temperature maxima in the voltage dependences of the capacitance and conductance of nBn structures, which are presumably related to the recharging of surface states at the heterointerface between the barrier and absorbing layers, are studied. It is found that in a wide range of frequencies and temperatures, the capacitance – voltage characteristics of nBn structures based on HgCdTe at reverse biases can be used to determine the concentration of donor impurities in the absorbing layer. It is shown that the admittance of test MIS devices in a mesa configuration, formed on the basis of the MBE HgCdTe nBn structures, is determined by the combined influence of electronic processes in the contact, barrier, and absorbing layers.