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Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator V. A. Novikov, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Chernikov, Evgeniy V | Kalygina, Vera M | Novikov, Vadim A. Source: Russian physics journalMaterial type: Article; Format:
electronic
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Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskii, S. N. Nesmelov [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
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Admittance of HgCdTe MIS structures with HgTe single quantum well I. I. Izhnin, E. I. Fitsych, S. N. Nesmelov [et.al.] by Izhnin, Igor I | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Fitsych, Olena I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: The International research and practice Conference “Nanotechnology and Nanomaterials” (NANO-2015) : abstracts book of participants of the International Summer School and International research and practice Conference, 26-29 August 2015Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
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Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V. Source: Journal of electronic materialsMaterial type: Article; Format:
electronic
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Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
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The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V. Source: Technical physics lettersMaterial type: Article; Format:
electronic
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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing A. G. Korotaev, A. V. Voytsekhovskiy, I. I. Izhnin [et al.] by Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mynbaev, Karim D | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Korotaev, Alexander G | Sidorov, Georgiy Yu. Source: Surface and coatings technologyMaterial type: Article; Format:
electronic
available online
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Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Sidorov, Georgiy Yu | Varavin, Vasilii S | Vasilev, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Dzyadukh, Stanislav M. Source: Russian physics journalMaterial type: Article; Format:
electronic
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Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Nesmelov, Sergey N. Source: Journal of communications technology and electronicsMaterial type: Article; Format:
electronic
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Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Nesmelov, Sergey N. Source: Physica status solidi CMaterial type: Article; Format:
electronic
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Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Other title: Вольт-фарадные характеристики CdHgTe МДП-структур с одиночными квантовыми ямами на основе HgTe.Online access: Click here to access online Availability: No items available :
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Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V | Voytsekhovskiy, Alexander V. Source: Journal of electronic materialsMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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