Electrical characteristics of epitaxial MCT after As+ implantation A. Voitsekhovskii, I. Izhnin, A. Korotaev [et.al.]
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ArticleSubject(s): эпитаксиальные пленки | ионная имплантация | приповерхностные слоиGenre/Form: статьи в журналах Online resources: Click here to access online
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Journal of Physics: Conference Series Vol. 830. P. 012083 (1-6)Abstract: In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantation annealing. Electrical characteristics of the samples were determined from Hall measurements. Voltage-current characteristics of the structures were also measured. Activation As and modification of the characteristics of MCT outside the implanted layer after annealing have been detected. Also we found differences in the p-n junction depths and electrically active defects profiles.
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In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantation annealing. Electrical characteristics of the samples were determined from Hall measurements. Voltage-current characteristics of the structures were also measured. Activation As and modification of the characteristics of MCT outside the implanted layer after annealing have been detected. Also we found differences in the p-n junction depths and electrically active defects profiles.
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