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Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.]

Contributor(s): Izhnin, Igor I | Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory VMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): эпитаксиальные пленки | флюенс | имплантация ионами мышьяка | наноразмерные дефектные слои | метод молекулярно-лучевой эпитаксииGenre/Form: статьи в сборниках Online resources: Click here to access online In: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book P. 378Abstract: We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV energy and fluence 1012, 1013, and 1014 cm-2.
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We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV energy and fluence 1012, 1013, and 1014 cm-2.

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