Normal view
MARC view
Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.]
Material type: ArticleContent type: Текст Media type: электронный Subject(s): эпитаксиальные пленки | флюенс | имплантация ионами мышьяка | наноразмерные дефектные слои | метод молекулярно-лучевой эпитаксииGenre/Form: статьи в сборниках Online resources: Click here to access online In: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book P. 378Abstract: We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV energy and fluence 1012, 1013, and 1014 cm-2.No physical items for this record
We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV energy and fluence 1012, 1013, and 1014 cm-2.
There are no comments on this title.