Formation of dislocations in the process of impurity diffusion in GaAs S. S. Khludkov, I. A. Prudaev, O. P. Tolbanov, I. V. Ivonin
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ArticleContent type: Текст Media type: электронный Subject(s): арсенид галлия | диффузия | механические напряжения | дислокационное образованиеGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 64, № 12. P. 2350-2356Abstract: A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elements of II, IV, and VI groups and transition elements) is studied, depending on the conditions of diffusion. It is shown that during the diffusion of impurities in GaAs, in the diffusion layers, dislocations are formed, the density of which in the layers doped to the limiting surface concentrations can reach 108 cm–2. As the surface concentration of the diffusing impurity decreases, the dislocation density decreases. The diffusion conditions are determined, under which no additional dislocations are formed. Based on a comparison of the obtained experimental data and the results of the performed calculation, it was concluded that the formation of dislocations during the diffusion of impurities in GaAs is due to the gradient of the impurity concentration.
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A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elements of II, IV, and VI groups and transition elements) is studied, depending on the conditions of diffusion. It is shown that during the diffusion of impurities in GaAs, in the diffusion layers, dislocations are formed, the density of which in the layers doped to the limiting surface concentrations can reach 108 cm–2. As the surface concentration of the diffusing impurity decreases, the dislocation density decreases. The diffusion conditions are determined, under which no additional dislocations are formed. Based on a comparison of the obtained experimental data and the results of the performed calculation, it was concluded that the formation of dislocations during the diffusion of impurities in GaAs is due to the gradient of the impurity concentration.
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