Nano‑scale structural studies of defects in arsenic‑implanted n and p‑type HgCdTe films I. I. Izhnin, A. V. Voytsekhovskiy, A. G. Korotaev [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): имплантация мышьяка | просвечивающая электронная микроскопия | эпитаксиальные пленки | дефектыGenre/Form: статьи в журналах Online resources: Click here to access online
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Applied nanoscience Vol. 12, № 3. P. 395-401Abstract: Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence in n and p-type Hg0.78Cd0.22Te flms grown by molecular-beam epitaxy. A similarity in defect pattern formed by arsenic implantation in n and p-type material was observed. The electrical properties of the implanted layers in n and p-type flms also appeared to be similar, confrming the results of microscopic observations.
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Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence in n and p-type Hg0.78Cd0.22Te flms grown by molecular-beam epitaxy. A similarity in defect pattern formed by arsenic implantation in n and p-type material was observed. The electrical properties of the implanted layers in n and p-type flms also appeared to be similar, confrming the results of microscopic observations.
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