Investigation of surface potential in the V-defect region of MBE CdxHg1−xTe film V. A. Novikov, D. V. Grigoryev
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ArticleSubject(s): поверхностный потенциал | молекулярно-лучевая эпитаксия | v-дефекты | эпитаксиальные пленкиGenre/Form: статьи в журналах Online resources: Click here to access online
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Semiconductors Vol. 49, № 3. P. 309-312Abstract: Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd x Hg1 − x Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd x Hg1 − x Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.
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Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd x Hg1 − x Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd x Hg1 − x Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.
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