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High-sensitive two-layer photoresistors based on р-CdxHg1-HGxTe with a converted near-surface layer N. D. Ismailov, N. Kh. Talipov, A. V. Voitsekhovskii

By: Ismailov, N. DContributor(s): Talipov, Niyaz Kh | Voytsekhovskiy, Alexander VMaterial type: ArticleArticleSubject(s): фоторезисторы | конвертированные слои | потенциальный барьер | фоточувствительность | время релаксацииGenre/Form: статьи в журналах Online resources: Click here to access online In: Russian physics journal Vol. 60, № 12. P. 2186-2192Abstract: The results of an experimental study of photoelectric characteristics of two-layer photoresistors based on р-Cd x Hg1–xTe (x = 0.24−0.28) with a thin near-surface layer of n-type obtained by treatment in atmospheric gas plasma are presented. It is shown that the presence of a potential barrier between the p- and n-regions causes high photosensitivity and speed of operation of such photoresistors at T = 77 K
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The results of an experimental study of photoelectric characteristics of two-layer photoresistors based on р-Cd x Hg1–xTe (x = 0.24−0.28) with a thin near-surface layer of n-type obtained by treatment in atmospheric gas plasma are presented. It is shown that the presence of a potential barrier between the p- and n-regions causes high photosensitivity and speed of operation of such photoresistors at T = 77 K

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