Formation of Ge/Si nanoscale structures at different growth conditions by molecular beam epitaxy V. A. Timofeev, A. I. Nikiforov, V. A. Zinovyev [et.al.]
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ArticleSubject(s): наноразмерные структуры | молекулярно-лучевая эпитаксияGenre/Form: статьи в журналах Online resources: Click here to access online
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Journal of nanoelectronics and optoelectronics Vol. 10, № 1. P. 99-103Abstract: Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by changing of growth parameters. Formation of Ge quantum dots in hut-island form is observed during deposition of Ge on Si film or GeSi solid solution layer in temperature range between 300 and 500 °C. Density of Ge islands without use of surfactant reaches 3.5 · 1011 cm–2 at lateral size of 12 nm. Lowering growth temperature up to 300 °C emergence of quantum fortress array takes place at deposition of Ge on GeSi solid solution layer. By depositing a Ge wetting layer at thickness of 3–5 monolayers and subsequent continuous annealing we have obtained nano-structures in form of wires. The results of these studies are of great applied value in the field of infrared photodetectors and single-hole transistors.
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Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by changing of growth parameters. Formation of Ge quantum dots in hut-island form is observed during deposition of Ge on Si film or GeSi solid solution layer in temperature range between 300 and 500 °C. Density of Ge islands without use of surfactant reaches 3.5 · 1011 cm–2 at lateral size of 12 nm. Lowering growth temperature up to 300 °C emergence of quantum fortress array takes place at deposition of Ge on GeSi solid solution layer. By depositing a Ge wetting layer at thickness of 3–5 monolayers and subsequent continuous annealing we have obtained nano-structures in form of wires. The results of these studies are of great applied value in the field of infrared photodetectors and single-hole transistors.
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