Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 nanodevices A. Sulaev, M. Zeng, S. Shen [et.al.]
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ArticleSubject(s): топологические изоляторы | магнитные поля | магнетосопротивление анизотропноеGenre/Form: статьи в журналах Online resources: Click here to access online
In:
Nano letters Vol. 15, № 3. P. 2061-2066Abstract: We report tunable in-plane anisotropic magnetoresistance (AMR) in nanodevices based on topological insulator
BiSbTeSe2 (BSTS) nanoflakes by electric gating. The AMR can be changed continuously from negative to positive when the
Fermi level is manipulated to cross the Dirac point by an applied gate electric field. We also discuss effects of the gate electric field, current density, and magnetic field on the in-plane AMR with a simple physical model, which is based on the in-plane magnetic field induced shift of the spin-momentum locked topological two surface states that are coupled through side surfaces and bulk weak antilocalization (WAL). The large, tunable and bipolar inplane AMR in BSTS devices provides the possibility of fabricating more sensitive logic and magnetic random access memory AMR devices.
We report tunable in-plane anisotropic magnetoresistance (AMR) in nanodevices based on topological insulator
BiSbTeSe2 (BSTS) nanoflakes by electric gating. The AMR can be changed continuously from negative to positive when the
Fermi level is manipulated to cross the Dirac point by an applied gate electric field. We also discuss effects of the gate electric field, current density, and magnetic field on the in-plane AMR with a simple physical model, which is based on the in-plane magnetic field induced shift of the spin-momentum locked topological two surface states that are coupled through side surfaces and bulk weak antilocalization (WAL). The large, tunable and bipolar inplane AMR in BSTS devices provides the possibility of fabricating more sensitive logic and magnetic random access memory AMR devices.
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