Scientific Library of Tomsk State University

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Your search returned 7 results.

1.
Led InGaN/GaN structures with short-period superlattice grown on flat and patterned sapphire substrates I. S. Romanov, I. A. Prudaev, V. N. Brudnyi [et.al.]

by Romanov, I. S | Brudnyi, Valentin N | Kopyev, Viktor V | Novikov, Vadim A | Marmalyuk, A. A | Kureshov, V. A | Sabitov, D. R | Mazalov, A. V | Prudaev, Ilya A | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Кафедра полупроводниковой электроники.

Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
2.
Diffusion of magnesium in LED structures with InGaN/GaN quantum wells at true growth temperatures 860-980°C of p-GaN I. S. Romanov, I. A. Prudaev, V. N. Brudnyi

by Romanov, I. S | Prudaev, Ilya A | Brudnyi, Valentin N.

Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
3.
Hopping transport of charge carriers in LEDs based on multiple InGaN/GaN quantum wells I. Prudaev, Y. L. Zubrilkina, A. A. Baktybaev, I. S. Romanov

by Prudaev, Ilya A | Baktybaev, A. A | Romanov, I. S | Zubrilkina, Yu. L | Томский государственный университет Радиофизический факультет Кафедра полупроводниковой электроники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
4.
Effect of the barrier thickness on the optical properties of InGaN/GaN/Al2O3 (0001) LED heterostructures I. S. Romanov, I. A. Prudaev, V. N. Brudnyi [et.al.]

by Romanov, I. S | Brudnyi, Valentin N | Kopyev, Viktor V | Novikov, Vadim A | Marmalyuk, A. A | Kureshov, V. A | Sabitov, D. R | Mazalov, A. V | Prudaev, Ilya A.

Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
5.
Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. N. Brudnyi

by Prudaev, Ilya A | Romanov, I. S | Brudnyi, Valentin N | Kopyev, Viktor V | Томский государственный университет Физический факультет Кафедра физики полупроводников.

Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
6.
On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. L. Oleynik

by Kopyev, Viktor V | Romanov, I. S | Oleynik, V. L | Prudaev, Ilya A.

Source: SemiconductorsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
7.
Comparative analysis of efficiency droop in InGaN/GaN lightemitting diodes for electrical and optical pumping conditions V. V. Kopyev, I. A. Prudaev, I. S. Romanov

by Kopyev, Viktor V | Prudaev, Ilya A | Romanov, I. S | Томский государственный университет Научное управление Лаборатории НУ | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :