Led InGaN/GaN structures with short-period superlattice grown on flat and patterned sapphire substrates I. S. Romanov, I. A. Prudaev, V. N. Brudnyi [et.al.]
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ArticleSubject(s): светодиоды | нитрид галлия | нитрид индия-галлия | фотолюминесценция | гетероструктурыGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 57, № 11. P. 1604-1608Abstract: The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are presented. In these structures, an increase of the internal quantum efficiency is observed. The high-resolution X-ray diffraction spectra and the integrated PL intensity are measured for two temperatures – 10 and 300 K – at different levels of optical YAG-laser pumping.
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The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are presented. In these structures, an increase of the internal quantum efficiency is observed. The high-resolution X-ray diffraction spectra and the integrated PL intensity are measured for two temperatures – 10 and 300 K – at different levels of optical YAG-laser pumping.
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