Influence of white light on the photoelectric characteristics of UV detectors based on β-Ga2O3 V. M. Kalygina, A. V. Tsymbalov, A. V. Almaev [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): радиочастотное магнетронное распыление | ультрафиолетовые фотодетекторы | фотоэлектрические характеристикиGenre/Form: статьи в журналах Online resources: Click here to access online
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IEEE sensors journal Vol. 23, № 14. P. 15530-15536Abstract: In this report, we consider the effect of radiation with radiation energy below the β -Ga 2 O 3 band-gap on the photoelectric characteristics of ultraviolet (UV) radiation detectors based on gallium oxide thin films. The gallium oxide film was deposited by radio frequency magnetron sputtering. Interdigital Ti/V electrodes were formed with an inter-electrode distance d = 30μm . The structures exhibit high values of photocurrent under irradiation with a wavelength of λ = 254 nm and intensity of 780μW /cm 2 . The detectors exhibit persistent photoconductivity after exposure to UV radiation. The presence of persistent conductivity is explained by the high concentration of traps in the Ga 2 O 3 film and their recharging under UV irradiation. Radiation with an energy quantum below the β -Ga 2 O 3 band-gap changes the charge state of trap centers in a gallium oxide film. This effect leads to an increase in photocurrent under UV exposure and increases the stability of detectors.
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In this report, we consider the effect of radiation with radiation energy below the β -Ga 2 O 3 band-gap on the photoelectric characteristics of ultraviolet (UV) radiation detectors based on gallium oxide thin films. The gallium oxide film was deposited by radio frequency magnetron sputtering. Interdigital Ti/V electrodes were formed with an inter-electrode distance d = 30μm . The structures exhibit high values of photocurrent under irradiation with a wavelength of λ = 254 nm and intensity of 780μW /cm 2 . The detectors exhibit persistent photoconductivity after exposure to UV radiation. The presence of persistent conductivity is explained by the high concentration of traps in the Ga 2 O 3 film and their recharging under UV irradiation. Radiation with an energy quantum below the β -Ga 2 O 3 band-gap changes the charge state of trap centers in a gallium oxide film. This effect leads to an increase in photocurrent under UV exposure and increases the stability of detectors.
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