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Electrophysical characteristics of Sub-THz diode with Schottky barrier V. D. Moskalenko, A. V. Badin, D. A. Pidotova
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ArticleContent type: Текст Media type: электронный Subject(s): Шоттки барьер | полупроводниковые структуры | детекторыGenre/Form: статьи в сборниках Online resources: Click here to access online
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2020 21st International conference of young specialists on micro/nanotechnologies and electron devices (EDM) С. 59-63Abstract: In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n- GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115-257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.
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In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n- GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115-257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.
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