Научная библиотека ТГУ catalog › Results of search for 'su:"Индия."'

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	1.	No cover image available Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights V. N. Brudnyi, S. Y. Sarkisov, A. V. Kosobutsky by Brudnyi, Valentin N \| Sarkisov, Sergey Yu \| Kosobutsky, Alexey V. Source: Semiconductor science and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	2.	No cover image available Proton (5 MeV) bombardment of InAs crystals V. N. Brudnyi, N. G. Kolin, A. I. Potapov by Brudnyi, Valentin N \| Kolin, Nikolay G \| Potapov, Alexander I. Source: Восьмая российская конференция "Арсенид галлия и полупроводниковые соединения группы III-V". GaAs-2002, 1-4 октября 2002 г. : материалы конференцииMaterial type: Article; Format: print ; Literary form: Not fiction ; Audience: Specialized; Availability: No items available : Log in to add tags Add to cart (remove)
	3.	No cover image available Diffusion of magnesium in LED structures with InGaN/GaN quantum wells at true growth temperatures 860-980°C of p-GaN I. S. Romanov, I. A. Prudaev, V. N. Brudnyi by Romanov, I. S \| Prudaev, Ilya A \| Brudnyi, Valentin N. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	4.	No cover image available Ab initio calculations of optical constants of GaSe and InSe layered crystals S. Y. Sarkisov, A. V. Kosobutsky, V. N. Brudnyi, Y. N. Zhuravlev by Sarkisov, Sergey Yu \| Brudnyi, Valentin N \| Zhuravlev, Yurii N \| Kosobutsky, Alexey V. Source: Physics of the solid stateMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	5.	No cover image available Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. N. Brudnyi by Prudaev, Ilya A \| Romanov, I. S \| Brudnyi, Valentin N \| Kopyev, Viktor V \| Томский государственный университет Физический факультет Кафедра физики полупроводников. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	6.	No cover image available Led InGaN/GaN structures with short-period superlattice grown on flat and patterned sapphire substrates I. S. Romanov, I. A. Prudaev, V. N. Brudnyi [et.al.] by Romanov, I. S \| Brudnyi, Valentin N \| Kopyev, Viktor V \| Novikov, Vadim A \| Marmalyuk, A. A \| Kureshov, V. A \| Sabitov, D. R \| Mazalov, A. V \| Prudaev, Ilya A \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Радиофизический факультет Кафедра полупроводниковой электроники. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	7.	No cover image available Effect of the barrier thickness on the optical properties of InGaN/GaN/Al2O3 (0001) LED heterostructures I. S. Romanov, I. A. Prudaev, V. N. Brudnyi [et.al.] by Romanov, I. S \| Brudnyi, Valentin N \| Kopyev, Viktor V \| Novikov, Vadim A \| Marmalyuk, A. A \| Kureshov, V. A \| Sabitov, D. R \| Mazalov, A. V \| Prudaev, Ilya A. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)