Scientific Library of Tomsk State University

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Your search returned 5 results.

1.
On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor V. N. Brudnyi, S. Y. Sarkisov, A. V. Kosobutsky

by Brudnyi, Valentin N | Sarkisov, Sergey Yu | Kosobutsky, Alexey V.

Source: SemiconductorsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
2.
Structural, elastic and electronic properties of GaSe under biaxial and uniaxial compressive stress A. V. Kosobutsky, S. Y. Sarkisov, V. N. Brudnyi

by Kosobutsky, Alexey V | Sarkisov, Sergey Yu | Brudnyi, Valentin N | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Физический факультет Кафедра физики полупроводников.

Source: Journal of physics and chemistry of solidsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
3.
The optical properties of 9 MeV electron irradiated GaSe crystals R. A. Red'kin, I. A. Prudaev, S. Y. Sarkisov [et.al.]

by Redkin, Ruslan A | Sarkisov, Sergey Yu | Kosobutsky, Alexey V | Brudnyi, Valentin N | Prudaev, Ilya A.

Source: International Siberian Conference on Control and Communications (SIBCON–2015), Russia, Omsk, may 21-23, 2015 : proceedingsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
4.
Ab initio calculations of optical constants of GaSe and InSe layered crystals S. Y. Sarkisov, A. V. Kosobutsky, V. N. Brudnyi, Y. N. Zhuravlev

by Sarkisov, Sergey Yu | Brudnyi, Valentin N | Zhuravlev, Yurii N | Kosobutsky, Alexey V.

Source: Physics of the solid stateMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
5.
Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights V. N. Brudnyi, S. Y. Sarkisov, A. V. Kosobutsky

by Brudnyi, Valentin N | Sarkisov, Sergey Yu | Kosobutsky, Alexey V.

Source: Semiconductor science and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :