On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor V. N. Brudnyi, S. Y. Sarkisov, A. V. Kosobutsky
Material type: ArticleSubject(s): селенид галлия | полупроводники | электронные свойстваGenre/Form: статьи в журналах Online resources: Click here to access online In: Semiconductors Vol. 49, № 10. P. 1307-1310Abstract: The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(0001)/Si(111) heteropairs are analyzed within the context of the concept of the charge neutrality level, CNLvb(GaSe) = Ev + 0.83 eV, with consideration for partial screening of the interface electrostatic dipole by metal- or semiconductor-induced tunneling states at the GaSe(0001) surface.Библиогр.: 19 назв.
The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(0001)/Si(111) heteropairs are analyzed within the context of the concept of the charge neutrality level, CNLvb(GaSe) = Ev + 0.83 eV, with consideration for partial screening of the interface electrostatic dipole by metal- or semiconductor-induced tunneling states at the GaSe(0001) surface.
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