Diffusion of magnesium in LED structures with InGaN/GaN quantum wells at true growth temperatures 860-980°C of p-GaN I. S. Romanov, I. A. Prudaev, V. N. Brudnyi
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ArticleSubject(s): светодиодные структуры | квантовые ямы | нитриды галлия | нитриды индия | диффузия | магний | истинная температура | пирометрыGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 61, № 1. P. 187-190Abstract: The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coefficient estimated for true growth temperatures of 860, 910, and 980°C were 7.5·10–17, 2.8·10–16, and 1.2·10–15 cm2/s, respectively. The temperature values given in the work were measured on the surface of the growing layer in situ using a pyrometer. The calculated activation energy for the temperature dependence of the diffusion coefficient was 2.8 eV.
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The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coefficient estimated for true growth temperatures of 860, 910, and 980°C were 7.5·10–17, 2.8·10–16, and 1.2·10–15 cm2/s, respectively. The temperature values given in the work were measured on the surface of the growing layer in situ using a pyrometer. The calculated activation energy for the temperature dependence of the diffusion coefficient was 2.8 eV.
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