Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing A. G. Korotaev, I. I. Izhnin, K. D. Mynbaev [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): ионная имплантация | термический отжиг | Холла эффектGenre/Form: статьи в журналах Online resources: Click here to access online
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Surface and coatings technology Vol. 393. P. 125721 (1-5)Abstract: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
and thermal annealing are reported on. A complete annihilation of implantation-induced extended
defects (dislocation loops), quasi-point defects and related donor centers was observed as a result of a two-stage
arsenic activation annealing. A high degree of activation of implanted arsenic was achieved with the annealing.
In some cases, the annealing was found to lead to the modification of the properties of the ‘base’ layers not
affected by implantation due to activation of uncontrolled acceptor defects and resulting changes in the degree of
electrical compensation.
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Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
and thermal annealing are reported on. A complete annihilation of implantation-induced extended
defects (dislocation loops), quasi-point defects and related donor centers was observed as a result of a two-stage
arsenic activation annealing. A high degree of activation of implanted arsenic was achieved with the annealing.
In some cases, the annealing was found to lead to the modification of the properties of the ‘base’ layers not
affected by implantation due to activation of uncontrolled acceptor defects and resulting changes in the degree of
electrical compensation.
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