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Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers A. Polyakov, V. I. Nikolaev, S. I. Stepanov [et al.] by Polyakov, Alexander | Nikolaev, Vladimir I | Stepanov, Sergey I | Almaev, Aleksei V | Pechnikov, Aleksei I | Yakimov, Eugene | Kushnarev, Bogdan O | Shchemerov, Ivan | Scheglov, Mikhail P | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Pearton, Stephen J. Source: Journal of applied physicsMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers A. Polyakov, V. I. Nikolaev, S. I. Stepanov [et al.] by Nikolaev, Vladimir I | Polyakov, Alexander | Stepanov, Sergey I | Almaev, Aleksei V | Pechnikov, Aleksei I | Yakimov, Eugene | Kushnarev, Bogdan O | Shchemerov, Ivan | Scheglov, Mikhail P | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Guzilova, Lyubov I | Pearton, Stephen J. Source: Journal of physics D: Applied physicsMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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