Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers A. Polyakov, V. I. Nikolaev, S. I. Stepanov [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): газофазная эпитаксия | галогениды | сапфировая подложкаGenre/Form: статьи в журналах Online resources: Click here to access online
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Journal of physics D: Applied physics Vol. 55, № 49. P. 495102Abstract: Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magnetron sputtering and annealing in air at 500 °C for 3 h. For both substrate orientations, the use of α-Cr2O3 buffers led to three major effects. The first was a substantial decrease of the half-width of the symmetric and asymmetric x-ray reflections. The second was an order of magnitude decrease of the net donor concentration produced by flowing the same amounts of Sn into the reactor. Third, there was a reduction in the concentration of the major electron trap in the films near Ec − 1 eV by more than a factor of two. These results show the major influence of sapphire substrate orientation on the electrical and structural properties of α-Ga2O3 grown by HVPE.
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Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magnetron sputtering and annealing in air at 500 °C for 3 h. For both substrate orientations, the use of α-Cr2O3 buffers led to three major effects. The first was a substantial decrease of the half-width of the symmetric and asymmetric x-ray reflections. The second was an order of magnitude decrease of the net donor concentration produced by flowing the same amounts of Sn into the reactor. Third, there was a reduction in the concentration of the major electron trap in the films near Ec − 1 eV by more than a factor of two. These results show the major influence of sapphire substrate orientation on the electrical and structural properties of α-Ga2O3 grown by HVPE.
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