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Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods A. A. Pishchagin, K. A. Lozovoy, V. Y. Serokhvostov [et.al.] by Pishchagin, Anton A | Serokhvostov, V. Yu | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Nikiforov, Alexander I | Lozovoy, Kirill A. Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type:  Article; Format:
electronic
available online
 ; Literary form:
Not fiction
; Audience:
Specialized;
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Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods A. G. Korotaev, A. A. Pishchagin, A. P. Kokhanenko, A. I. Nikiforov by Korotaev, Alexander G | Kokhanenko, Andrey P | Nikiforov, Alexander I | Pishchagin, Anton A | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
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Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions V. A. Timofeev, A. P. Kokhanenko, A. I. Nikiforov [et.al.] by Timofeev, V. A | Nikiforov, Alexander I | Mashanov, Vladimir I | Tuktamyshev, Artur R | Loshkarev, Ivan D | Kokhanenko, Andrey P | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Russian physics journalMaterial type: Article; Format:
electronic
available online
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Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy A. I. Nikiforov, V. F. Timofeev, V. I. Mashanov [et al.] by Timofeev, Vyacheslav F | Mashanov, Vladimir I | Azarov, Ivan A | Loshkarev, Ivan D | Volodin, Vladimir A | Gulyaev, Dmitry V | Chetyrin, Igor A | Korolkov, Ilya V | Nikiforov, Alexander I. Source: Applied surface scienceMaterial type: Article; Format:
electronic
available online
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Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism V. F. Timofeev, V. I. Mashanov, A. I. Nikiforov [et al.] by Mashanov, Vladimir I | Nikiforov, Alexander I | Skvortsov, Ilya | Gavrilova, Tatiana A | Gulyaev, Dmitry V | Gutakovskii, Anton K | Chetyrin, Igor A | Timofeev, Vyacheslav F. Source: AIP AdvancesMaterial type: Article; Format:
electronic
available online
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Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers V. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev [et al.] by Nikiforov, Alexander I | Tuktamyshev, Artur R | Mashanov, Vladimir I | Yesin, Michail Yu | Bloshkin, Aleksei A | Timofeev, Vyacheslav F. Source: Nanoscale research lettersMaterial type: Article; Format:
electronic
available online
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Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films V. F. Timofeev, V. I. Mashanov, A. I. Nikiforov [et al.] by Mashanov, Vladimir I | Nikiforov, Alexander I | Azarov, Ivan A | Loshkarev, Ivan D | Korolkov, Ilya V | Gavrilova, Tatiana A | Yesin, Michail Yu | Chetyrin, Igor A | Timofeev, Vyacheslav F. Source: Materials research expressMaterial type: Article; Format:
electronic
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Morphology, structure, and optical properties of SnO (x) films A. I. Nikiforov, V. A. Timofeev, V. I. Mashanov [et al.] by Timofeev, V. A | Mashanov, Vladimir I | Azarov, Ivan A | Loshkarev, Ivan D | Korolkov, Ilya V | Gavrilova, Tatiana A | Esin, M. Yu | Nikiforov, Alexander I. Source: Russian physics journalMaterial type: Article; Format:
electronic
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