000			02341nab a2200325 c 4500
001			vtls000652077
003			RU-ToGU
005			20230319214512.0
007			cr |
008			190410|2018 ne s a eng dd
024	7		_a10.1016/j.jmmm.2017.10.106 _2doi
035			_ato000652077
040			_aRU-ToGU _brus _cRU-ToGU
245	1	0	_aInterface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures _cV. N. Men'shov, I. A. Shvets, V. V. Tugushev, E. V. Chulkov
504			_aБиблиогр.: 24 назв.
520	3		_aWe report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.
653			_aтопологические изоляторы
653			_aХолла спиновый эффект
653			_aгетероструктуры
655		4	_aстатьи в журналах _9879358
700	1		_aShvets, I. A. _9492247
700	1		_aTugushev, V. V. _9167673
700	1		_aChulkov, Evgueni V. _989119
700	1		_aMenshov, V. N. _9101643
773	0		_tJournal of magnetism and magnetic materials _d2018 _gVol. 459. P. 231-235 _x0304-8853
852	4		_aRU-ToGU
856	4		_uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000652077
908			_aстатья
999			_c450043