000 01976nab a2200337 c 4500
001 vtls000552770
003 RU-ToGU
005 20210907030203.0
007 cr |
008 181202|2015 xxu s f eng d
024 7 _a10.1063/1.4936340
_2doi
035 _ato000552770
040 _aRU-ToGU
_brus
_cRU-ToGU
245 1 0 _aPhonon bottleneck in p-type Ge/Si quantum dots
_cA. I. Yakimov, V. V. Kirienko, V. A. Armbrister [et.al.]
504 _aБиблиогр.: 34 назв.
520 3 _aWe study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.
653 _aквантовые точки
653 _aгерманий
653 _aкремний
653 _aфононы
655 4 _aстатьи в журналах
_9681159
700 1 _aYakimov, Andrew I.
_9175049
700 1 _aArmbrister, V. A.
_9175047
700 1 _aDvurechenskii, Anatolii V.
_9175048
700 1 _aKirienko, V. V.
_9175046
773 0 _tApplied physics letters
_d2015
_gVol. 107, № 21. P. 213502-1-213502-4
_x0003-6951
852 4 _aRU-ToGU
856 7 _uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000552770
908 _aстатья
999 _c409187