| 000 | 01970nab a2200349 c 4500 | ||
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| 001 | vtls000552753 | ||
| 003 | RU-ToGU | ||
| 005 | 20230319205323.0 | ||
| 007 | cr | | ||
| 008 | 180311|2015 ru s a eng dd | ||
| 024 | 7 |
_a10.1134/S0021364015110119 _2doi |
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| 035 | _ato000552753 | ||
| 040 |
_aRU-ToGU _brus _cRU-ToGU |
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| 245 | 1 | 0 |
_aStrain-induced localization of electrons in layers of the second-type Ge/Si quantum dots _cA. I. Yakimov, V. V. Kirienko, A. A. Bloshkin [et.al.] |
| 504 | _aБиблиогр.: 15 назв. | ||
| 520 | 3 | _aElectronic states in multilayer Ge/Si heterostructures with different periods of the arrangement of layers of Ge quantum dots have been studied by the photocurrent spectroscopy method. It has been found that the binding energy of electrons increases with a decrease in the thickness of a silicon spacer and with the extension of Si layers near the vortices of Ge nanoclusters. The results constitute experimental evidence of the deformation mechanism of the formation of localized electronic states in Ge/Si heterostructures with second-type quantum dots. | |
| 653 | _aквантовые точки | ||
| 653 | _aкремний | ||
| 653 | _aгерманий | ||
| 653 | _aлокализация электронов | ||
| 655 | 4 |
_aстатьи в журналах _9879358 |
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| 700 | 1 |
_aYakimov, Andrew I. _9175049 |
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| 700 | 1 |
_aBloshkin, Aleksei A. _9106764 |
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| 700 | 1 |
_aArmbrister, V. A. _9175047 |
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| 700 | 1 |
_aDvurechenskii, Anatolii V. _9175048 |
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| 700 | 1 |
_aKirienko, V. V. _9175046 |
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| 773 | 0 |
_tJournal of experimental and theoretical physics letters _d2015 _gVol. 101, № 11. P. 750-753 _x0021-3640 |
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| 852 | 4 | _aRU-ToGU | |
| 856 | 7 | _uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000552753 | |
| 908 | _aстатья | ||
| 999 | _c408474 | ||