000			02363nab a2200373 c 4500
001			vtls000548081
003			RU-ToGU
005			20230319205003.0
007			cr |
008			180311|2015 ru s a eng dd
024	7		_a10.1007/s11182-015-0597-3 _2doi
035			_ato000548081
040			_aRU-ToGU _brus _cRU-ToGU
245	1	0	_aEffect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy _cA. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]
504			_aБиблиогр.: 17 назв.
520	3		_aThe effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density of positive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.
653			_aтеллурид кадмия-ртути
653			_aмолекулярно-лучевая эпитаксия
653			_aнаносекундные разряды
653			_aадмиттанс
653			_aМДП-структуры
655		4	_aстатьи в журналах _9879358
700	1		_aVoytsekhovskiy, Alexander V. _991706
700	1		_aDzyadukh, Stanislav M. _995711
700	1		_aGrigoryev, Denis V. _9101525
700	1		_aTarasenko, Viktor Fedotovich _976225
700	1		_aShulepov, Mikhail A. _994720
700	1		_aNesmelov, Sergey N. _9101528
773	0		_tRussian physics journal _d2015 _gVol. 58, № 7. P. 970-977 _x1064-8887
852	4		_aRU-ToGU
856	7		_uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000548081
908			_aстатья
999			_c405378