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  • Your search returned 148 results.

    1.
    Electrical properties of the V-defects of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.]

    by Novikov, Vadim A | Bezrodnyy, Dmitriy A | Voytsekhovskiy, Alexander V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Grigoryev, Denis V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    2.
    Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    3.
    Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et.al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Fitsych, Olena I | Savytskyy, Hrygory V | Świątek, Zbigniew.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    4.
    Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.]

    by Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Yakushev, Maxim V | Izhnin, Igor I | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    5.
    Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Semiconductor science and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    6.
    Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.]

    by Fitsych, Olena I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Kurbanov, Kurban R | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Izhnin, Igor I | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Jerzy.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    7.
    Luminescence studies of HgCdTe‑ and InAsSb‑based quantum‑well structures I. I. Izhnin, A. I. Izhnin, O. I. Fitsych [et al.]

    by Izhnin, A. I | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Semakova, A. A | Bazhenov, N. L | Mynbaev, Karim D | Zegrya, G. G | Izhnin, Igor I.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    8.
    Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Voytsekhovskiy, Alexander V.

    Source: VacuumMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    9.
    Ion implantation in narrow-gap CdxHg1–xTe solid solutions N. Kh. Talipov, A. V. Voytsekhovskii

    by Talipov, Niyaz Kh | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    10.
    Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator V. A. Novikov, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Chernikov, Evgeniy V | Kalygina, Vera M | Novikov, Vadim A.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    11.
    High-sensitive two-layer photoresistors based on р-CdxHg1-HGxTe with a converted near-surface layer N. D. Ismailov, N. Kh. Talipov, A. V. Voitsekhovskii

    by Ismailov, N. D | Talipov, Niyaz Kh | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    12.
    Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    13.
    Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods A. A. Pishchagin, K. A. Lozovoy, V. Y. Serokhvostov [et.al.]

    by Pishchagin, Anton A | Serokhvostov, V. Yu | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Nikiforov, Alexander I | Lozovoy, Kirill A.

    Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    14.
    Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe M. Pociask-Bialy, I. Izhnin, A. Voitsekhovskii [et.al.]

    by Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Izhnin, Igor I.

    Source: EPJ Web of ConferencesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    15.
    Theoretical model for description of single CdHgTe quantum well photoluminescense spectra A. V. Voitsekhovskii, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    16.
    Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells A. V. Voitsekhovskii, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Advanced Materials ResearchMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    17.
    Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe D. I. Gorn, A. V. Voitsekhovskii, S. M. Dzyadukh, S. N. Nesmelov

    by Gorn, Dmitriy Igorevich | Dzyadukh, Stanislav M | Nesmelov, Sergey N | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    18.
    Changes in the electro-physical propertyies of MCT epitaxial films affected by a plasma volume discharge induced by an avalache beam in atmospheric-pressure air D. V. Grigoryev, A. V. Voytsekhovskii, K. A. Lozovoy [et.al.]

    by Grigoryev, Denis V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : AbstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    19.
    UV photodetectors based on wide-gap AlGaN semiconductors A. V. Voytsekhovskii, S. N. Nesmelov

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический университет Научные подразделения СФТИ.

    Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    20.
    Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    21.
    Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices S. Dzyadukh, S. Nesmelov, A. Voytsekhovskiy, D. Gorn

    by Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    22.
    Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    23.
    Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Journal of physics and chemistry of solidsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    24.
    An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    25.
    Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    26.
    Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra A. V. Voytsekhovskii, S. M. Dzyadukh, D. I. Gorn [et al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Physica scriptaMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    27.
    TEM studies of structural defects in HgTe/HgCdTe quantum wells A. Yu. Bonchyk, H. V. Savytskyy, Z. Swiatek [et al.]

    by Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Y | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    28.
    Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation V. G. Sredin, R. Ramakoti, O. B. Ananin [et al.]

    by Sredin, Victor G | Ramakoti, Ravi S | Ananin, Oleg B | Voytsekhovskiy, Alexander V | Melekhov, Andrey P.

    Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedingsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    29.
    Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskii, S. N. Nesmelov [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    30.
    Nano‑scale structural studies of defects in arsenic‑implanted n and p‑type HgCdTe films I. I. Izhnin, A. V. Voytsekhovskiy, A. G. Korotaev [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Fitsych, Olena I | Varavin, Vasilii S | Marin, Denis V | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    31.
    Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    32.
    Admittance of HgCdTe MIS structures with HgTe single quantum well I. I. Izhnin, E. I. Fitsych, S. N. Nesmelov [et.al.]

    by Izhnin, Igor I | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Fitsych, Olena I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: The International research and practice Conference “Nanotechnology and Nanomaterials” (NANO-2015) : abstracts book of participants of the International Summer School and International research and practice Conference, 26-29 August 2015Material type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    33.
    Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs I. I. Izhnin, A. I. Izhnin, K. D. Mynbaev [et.al.]

    by Izhnin, A. I | Mynbaev, Karim D | Bazhenov, N. L | Shilyaev, A. V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    34.
    Analysis of the nBn-type barrier structures for infrared photodiode detectors A. V. Voitsekhovskii, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    35.
    Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films A. V. Voytsekhovskiy, I. I. Izhnin, I. I. Syvorotka [et al.]

    by Izhnin, Igor I | Syvorotka, I. I | Korotaev, Alexander G | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    36.
    Measurement of the charge carrier mobility in MEH-PPV and MEH-PPV-POSS organic semiconductor films I. V. Romanov, A. V. Voytsekhovskii, K. M. Dyagterenko [et.al.]

    by Romanov, I. V | Dyagterenko, K. M | Kopylova, Tatyana N | Kokhanenko, Andrey P | Nikonova, Elena N | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    37.
    Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing A. G. Korotaev, I. I. Izhnin, K. D. Mynbaev [et al.]

    by Izhnin, Igor I | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Korotaev, Alexander G | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Jerzy.

    Source: Surface and coatings technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    38.
    Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy O. Yu. Bonchyk, H. V. Savytskyy, I. I. Izhnin [et al.]

    by Izhnin, Igor I | Mynbaev, Karim D | Syvorotka, I. I | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Marin, Denis V | Bonchyk, A. Yu | Mikhailov, Nikolay N | Yakushev, Maxim V | Świątek, Zbigniew | Morgiel, Jerzy | Jakiela, Rafal | Savytskyy, Hrygory V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    39.
    Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells I. I. Izhnin, I. I. Syvorotka, A. V. Voytsekhovskiy [et al.]

    by Syvorotka, I. I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Izhnin, Igor I.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    40.
    Impedance characterization of organic light-emitting structures with thermally activated delayed fluorescence A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Voytsekhovskiy, Alexander V.

    Source: Physica status solidi A : applications and materials scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    41.
    Generation of surface defects in epitaxial CdxHg1-xTe layers by soft X-ray radiation of laser plasma V. G. Sredin, A. V. Voytsekhovskiy, O. B. Anan'in [et al.]

    by Voytsekhovskiy, Alexander V | Ananin, Oleg B | Izhnin, Igor I | Melekhov, Andrey P | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Sredin, Victor G.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    42.
    Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates I. I. Izhnin, A. V. Voytsekhovsky, A. G. Korotaev [et.al.]

    by Izhnin, Igor I | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Voytsekhovskiy, Alexander V | Yakushev, Maxim V | Jakiela, Rafal.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    43.
    Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et.al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Pociask-Bialy, Malgorzata | Mynbaev, Karim D.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    44.
    Influence of composition of Hg1-xCdxTe(x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation A. V. Voytsekhovskiy, D. V. Grigoryev, A. G. Korotaev [et al.]

    by Grigoryev, Denis V | Korotaev, Alexander G | Kokhanenko, Andrey P | Lozovoy, Kirill A | Izhnin, Igor I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Voytsekhovskiy, Alexander V | Varavin, Vasilii S | Yakushev, Maxim V.

    Source: Materials research expressMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    45.
    Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Lyapunov, D. V | Nesmelov, Sergey N.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    46.
    Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films A. V. Voytsekhovskiy, A. G. Korotaev, I. I. Izhnin [et al.]

    by Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Izhnin, Igor I | Mynbaev, Karim D | Yakushev, Maxim V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Fitsych, Olena I | Kurbanov, Kurban R.

    Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedingsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    47.
    Description of electrophysical characteristics for MIS-structures with CdHgTe-based quantum wells under the 8–300 K A. V. Voitsekhovskii, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    48.
    Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Thin solid filmsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    49.
    Development of a high-voltage waveguide photodetector comprised of Schottky diodes and based on the Ge–Si structure with Ge quantum dots for portable thermophotovoltaic converters N. A. Pakhanov, O. P. Pchelyakov, A. I. Yakimov, A. V. Voitsekhovskii

    by Pakhanov, N. A | Yakimov, Andrew I | Voytsekhovskiy, Alexander V | Pchelyakov, Oleg P.

    Source: Optoelectronics, instrumentation and data processingMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    50.
    Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskii

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Physical chemistry chemical physicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :