Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): ионная имплантация | электрофизические свойства | пленки CdHgTe | дефектыGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 63, № 2. P. 290-295Abstract: By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass
spectroscopy and transmission electron microscopy, the localization and nature of donor defects formed during
implantation were determined. It has been shown that such defects are dislocation loops and quasi-point
defects that trap interstitial mercury atoms released during implantation.
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By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass
spectroscopy and transmission electron microscopy, the localization and nature of donor defects formed during
implantation were determined. It has been shown that such defects are dislocation loops and quasi-point
defects that trap interstitial mercury atoms released during implantation.
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