Characterization of GaAs:Cr sensors using the charge-integrating JUNGFRAU readout chip D. Greiffenberg, M. Andrä, R. Barten [et al.]
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ArticleSubject(s): GaAs:Cr, рентгеновские сенсоры | эффективность сбора заряда | арсенид-галлиевые детекторыGenre/Form: статьи в журналах Online resources: Click here to access online
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Journal of instrumentation : electronic journal Vol. 14, № 5. P. P05020 (1-17)Abstract: Chromium compensated GaAs sensors have been characterized using the charge-integrating readout chip JUNGFRAU. Due to its low noise performance and 75 × 75 μm2 pixel size, JUNGFRAU enables a precise measurement of the charge (of either polarity) with a high spatial resolution. Several sensor parameters like dark current, noise and spectral performance as well as the charge transport properties of the electrons have been determined. The short lifetime of holes in GaAs:Cr gives rise to an effect where pixels adjacent to a pixel with a photon hit show a strong negative signal when being absorbed close to the readout electrode. This so-called `crater effect' has been simulated and allows an estimation of the hole lifetime in GaAs:Cr.
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Chromium compensated GaAs sensors have been characterized using the charge-integrating readout chip JUNGFRAU. Due to its low noise performance and 75 × 75 μm2 pixel size, JUNGFRAU enables a precise measurement of the charge (of either polarity) with a high spatial resolution. Several sensor parameters like dark current, noise and spectral performance as well as the charge transport properties of the electrons have been determined. The short lifetime of holes in GaAs:Cr gives rise to an effect where pixels adjacent to a pixel with a photon hit show a strong negative signal when being absorbed close to the readout electrode. This so-called `crater effect' has been simulated and allows an estimation of the hole lifetime in GaAs:Cr.
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