Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator V. N. Men'shov, V. V. Tugushev, S. V. Eremeev [et.al.]
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ArticleSubject(s): топологические изоляторы | электронные состояния | селенид висмута | селенид цинкаGenre/Form: статьи в журналах | статьи в журналах Online resources: Click here to access online
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Physical Review B Vol. 91, № 8. P. 075307-1-075307-9Abstract: In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically describe the formation of interfacial bound electron states of two types (ordinary and topological) having different spatial distributions and energy spectra. We show that these states appear as a result of the interplay of two factors: hybridization and band bending of the TI and NI electron states near the TI/NI boundary. These results are corroborated by the density functional theory calculations for the exemplar Bi2Se3/ZnSe system.
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In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically describe the formation of interfacial bound electron states of two types (ordinary and topological) having different spatial distributions and energy spectra. We show that these states appear as a result of the interplay of two factors: hybridization and band bending of the TI and NI electron states near the TI/NI boundary. These results are corroborated by the density functional theory calculations for the exemplar Bi2Se3/ZnSe system.
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